Inventor · disambiguated record

Li-Zhen Yu

Also filed as: Yu li-zhen

131 granted patents·71 pending applications·162 citations·filing 2017–2025

99Inventor score

Technology areasH10W H10P H10D B82Y H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD200 TAIWAN CEMICONDUCTOR MFG COMPANY LTD1 TAIWAN SEMICONDUSTOR MFG CO LTD1

Top patents by PatentIndex Score

202 records

0199US11581224B2Method for forming long channel back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·8 cites·20 claims
0299US11532713B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·6 cites·20 claims
0399US11450751B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·8 cites·20 claims
0499US11404548B2Capacitance reduction for backside power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·7 cites·20 claims
0599US11374093B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·6 cites·20 claims
0699US11349004B2Backside vias in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·6 cites·20 claims
0798US11830769B2Semiconductor device with air gaps and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·4 cites·20 claims
0898US11621197B2Semiconductor device with gate cut feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·5 cites·20 claims
0998US11482595B1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·4 cites·20 claims
1098US11456209B2Spacers for semiconductor devices including a backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
1198US11342413B2Selective liner on backside via and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·5 cites·20 claims
1298US11257758B2Backside connection structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·5 cites·20 claims
1398US11239325B2Semiconductor device having backside via and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
1498US11222892B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·16 cites·20 claims
1597US12009394B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
1697US11915972B2Methods of forming spacers for semiconductor devices including backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
1797US11848372B2Method and structure for reducing source/drain contact resistance at wafer backsideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·3 cites·20 claims
1897US11682730B2Connector via structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 20, 2023·4 cites·20 claims
1997US11551969B2Integrated circuit structure with backside interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 10, 2023·3 cites·20 claims
2097US11502201B2Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·4 cites·20 claims
2197US11152475B2Method for forming source/drain contacts utilizing an inhibitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·4 cites·20 claims
2296US12132092B2Backside vias in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·2 cites·19 claims
2396US11984350B2Integrated circuit structure with backside interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
2496US11721623B2Backside connection structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·2 cites·20 claims
2596US11670691B2Method for forming source/drain contacts utilizing an inhibitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
2696US11387140B2Enlarging contact area and process window for a contact viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·20 claims
2796US11316023B2Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
2895US12369365B2Semiconductor devices with backside power rail and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·1 cites·20 claims
2994US11777003B2Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
3094US11588050B2Backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·2 cites·20 claims
3193US11955515B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
3292US12414362B2Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·1 cites·20 claims
3392US11901423B2Capacitance reduction for backside power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
3492US11424332B2Gap spacer for backside contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·2 cites·20 claims
3591US11804486B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·1 cites·20 claims
3691US11532714B2Semiconductor device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
3791US11456246B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
3891US11309212B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
3991US2025366150A1Dual side contact structures in semiconductor devicesTAIWAN CEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
4091US2025344434A1Backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4190US11508615B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
4289US11361986B2Using a liner layer to enlarge process window for a contact viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
4389US2025364320A1Semiconductor device with air gaps and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4488US11251305B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·2 cites·20 claims
4588US11094788B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·3 cites·20 claims
4688US10943829B2Slot contacts and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·3 cites·20 claims
4788US2025329580A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4887US12363946B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
4987US12302607B2Backside gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
5087US12266563B2Enlarging contact area and process window for a contact viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims

Showing the top 50 of 202 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →