Inventor · disambiguated record
Lijuan Zou
Also filed as: ZOU LIJUAN
13 granted patents·25 pending applications·26 citations·filing 2009–2024
87Inventor score
Files withIBM28SEAGATE TECHNOLOGY LLC6CATARC AUTOMOTIVE TEST CENTER TIANJIN CO LTD1HUANG XIAOYUE1NAZAROV ALEXEY V1
Top patents by PatentIndex Score
38 records- 0188US8339741B2Write pole trailing edge partial side shieldZHANG YIFAN·Filed 2009·Granted Dec 25, 2012·12 cites·20 claims
- 0286US10937860B2Nanosheet transistor bottom isolationIBM·Filed 2019·Granted Mar 2, 2021·3 cites·15 claims
- 0384US10100422B2Near field transducers including electrodeposited plasmonic materials and methods of formingSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Oct 16, 2018·2 cites·18 claims
- 0475US9437221B2Method of making a transducer headSEAGATE TECHNOLOGY LLC·Filed 2015·Granted Sep 6, 2016·3 cites·19 claims
- 0573US9378757B2Methods of making a near field transducer with a flare pegSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Jun 28, 2016·3 cites·20 claims
- 0672US11015256B2Near field transducers including electrodeposited plasmonic materials and methods of formingSEAGATE TECHNOLOGY LLC·Filed 2018·Granted May 25, 2021·0 cites·9 claims
- 0768US9142231B2Method of making a transducer headSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Sep 22, 2015·2 cites·13 claims
- 0867US11489044B2Nanosheet transistor bottom isolationIBM·Filed 2020·Granted Nov 1, 2022·0 cites·16 claims
- 0961US9297959B2Optical articles and methods of making sameHUANG XIAOYUE·Filed 2011·Granted Mar 29, 2016·1 cites·18 claims
- 1061US2025329587A1Through silicon viaIBM·Filed 2024·Application pending·0 cites
- 1161US2025349704A1Through dielectric viaIBM·Filed 2024·Application pending·0 cites
- 1261US2025318201A1Backside gate tie down through backside power barIBM·Filed 2024·Application pending·0 cites
- 1361US2025357307A1Backside metal-insulator-metal capacitorIBM·Filed 2024·Application pending·0 cites
- 1460US2025301790A1Deep source drain regions and backside contactsIBM·Filed 2024·Application pending·0 cites
- 1560US2025380474A1Backside source/drain contacts without inner spacersIBM·Filed 2024·Application pending·0 cites
- 1660US2025275243A1Backside via for backside power schemeIBM·Filed 2024·Application pending·0 cites
- 1760US2025285974A1Self-aligned backside via for backside power schemeIBM·Filed 2024·Application pending·0 cites
- 1859US2025203988A1Lower gate cap for backside contact insulationIBM·Filed 2023·Application pending·0 cites
- 1959US2025210520A1Dual gate cut with backside power deliveryIBM·Filed 2023·Application pending·0 cites
- 2059US2025239521A1Stacked field effect transistor with epitaxy cut for source/drain contactIBM·Filed 2024·Application pending·0 cites
- 2159US2025194156A1Deep source/drain with sidewall liner protection and direct backside contactIBM·Filed 2023·Application pending·0 cites
- 2259US2025169172A1Merged backside contact isolationIBM·Filed 2023·Application pending·0 cites
- 2359US2025201711A1Enlarged placeholder and backside contactIBM·Filed 2023·Application pending·0 cites
- 2459US2025234631A1Shared source/drain contactIBM·Filed 2024·Application pending·0 cites
- 2558US2025079309A1Wrap-around middle-of-line contact with backside source/drain cut for direct contact and backside power delivery networkIBM·Filed 2023·Application pending·0 cites
- 2658US2025185299A1Enlarged backside contact through sti liner recessIBM·Filed 2023·Application pending·0 cites
- 2758US2025063817A1Integration of stacked logic device with passive deviceIBM·Filed 2023·Application pending·0 cites
- 2858US2025113560A1Field-effect transistor crescent-shaped dielectric isolationIBM·Filed 2023·Application pending·0 cites
- 2958US2025185298A1U-shaped spacer to protect the intra-device space region for stacked fetIBM·Filed 2023·Application pending·0 cites
- 3057US2025185352A1Integration of a vertical diode and a transistorIBM·Filed 2023·Application pending·0 cites
- 3157US2025151400A1Semiconductor structures with integrated electrostatic discharge clamp circuitsIBM·Filed 2023·Application pending·0 cites
- 3255US2024420990A1Semiconductor backside isolation feature for merged epitaxyIBM·Filed 2023·Application pending·0 cites
- 3353US2024421037A1Source/drain protection using a backside placeholderIBM·Filed 2023·Application pending·0 cites
- 3452US12191388B2Area scaling for VTFET contactsIBM·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 3550US11158786B2MRAM device formation with controlled ion beam etch of MTJIBM·Filed 2019·Granted Oct 26, 2021·0 cites·15 claims
- 3647US9058823B2Protected transducer for dead layer reductionNAZAROV ALEXEY V·Filed 2009·Granted Jun 16, 2015·0 cites·16 claims
- 3746US2025085724A1Test device and method for remote control parkingCATARC AUTOMOTIVE TEST CENTER TIANJIN CO LTD·Filed 2024·Application pending·0 cites
- 3840US9385089B2Alignment mark recovery with reduced topographySEAGATE TECHNOLOGY LLC·Filed 2013·Granted Jul 5, 2016·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →