Inventor · disambiguated record
Ljubo Radic
Also filed as: RADIC LJUBO
37 granted patents·5 pending applications·91 citations·filing 2008–2024
96Inventor score
Files withNXP USA INC24NXP BV6FREESCALE SEMICONDUCTOR INC3INT RECTIFIER CORP3INFINEON TECHNOLOGIES AMERICAS CORP2
Top patents by PatentIndex Score
42 records- 0196US10103257B1Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2017·Granted Oct 16, 2018·17 cites·12 claims
- 0293US8502287B2Semiconductor devices with enclosed void cavitiesRADIC LJUBO·Filed 2010·Granted Aug 6, 2013·21 cites·16 claims
- 0389US10600911B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Mar 24, 2020·7 cites·12 claims
- 0489US10424646B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Sep 24, 2019·6 cites·13 claims
- 0586US10522677B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Dec 31, 2019·5 cites·14 claims
- 0686US10431678B2Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2018·Granted Oct 1, 2019·4 cites·5 claims
- 0784US11018247B1Semiconductor device with a base link region and method thereforNXP USA INC·Filed 2019·Granted May 25, 2021·3 cites·23 claims
- 0884US9202882B2Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewallsINT RECTIFIER CORP·Filed 2014·Granted Dec 1, 2015·4 cites·20 claims
- 0981US7919388B2Methods for fabricating semiconductor devices having reduced gate-drain capacitanceFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Apr 5, 2011·7 cites·18 claims
- 1080US7838389B2Enclosed void cavity for low dielectric constant insulatorFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Nov 23, 2010·8 cites·17 claims
- 1171US11227921B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2019·Granted Jan 18, 2022·1 cites·18 claims
- 1271US10225925B2Radio frequency coupling and transition structureFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 5, 2019·2 cites·20 claims
- 1370US10418483B2Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layersNXP BV·Filed 2017·Granted Sep 17, 2019·1 cites·19 claims
- 1470US9299793B2Semiconductor device with a field plate trench having a thick bottom dielectricINT RECTIFIER CORP·Filed 2014·Granted Mar 29, 2016·1 cites·20 claims
- 1568US11777002B2Laterally-diffused metal-oxide semiconductor transistor and method thereforNXP USA INC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 1668US10833174B2Transistor devices with extended drain regions located in trench sidewallsNXP USA INC·Filed 2018·Granted Nov 10, 2020·1 cites·20 claims
- 1766US8735978B2Semiconductor devices having reduced gate-drain capacitanceRADIC LJUBO·Filed 2011·Granted May 27, 2014·2 cites·18 claims
- 1865US9437717B2Interface control in a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 6, 2016·1 cites·10 claims
- 1961US12170254B2Transistor with integrated short circuit protectionNXP USA INC·Filed 2022·Granted Dec 17, 2024·0 cites·17 claims
- 2059US10483359B2Method of fabricating a power semiconductor deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Nov 19, 2019·0 cites·8 claims
- 2159US9735241B2Semiconductor device with a field plate double trench having a thick bottom dielectricINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Aug 15, 2017·0 cites·4 claims
- 2258US12501634B2Method for forming a transistor with a conductivity doped base structureNXP USA INC·Filed 2022·Granted Dec 16, 2025·0 cites·19 claims
- 2358US2025098189A1Bipolar transistor and method of making a bipolar transistorNXP BV·Filed 2024·Application pending·0 cites
- 2457US12132093B2Base silicide on monocrystalline base structuresNXP USA INC·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
- 2557US12107143B2Semiconductor device with extrinsic base region and method of fabrication thereforNXP BV·Filed 2022·Granted Oct 1, 2024·0 cites·18 claims
- 2656US11640975B2Silicided collector structureNXP USA INC·Filed 2021·Granted May 2, 2023·0 cites·17 claims
- 2753US11901414B2Semiconductor device with a defect layer and method of fabrication thereforNXP BV·Filed 2021·Granted Feb 13, 2024·0 cites·17 claims
- 2853US2024055314A1Transistor heat dissipation structureNXP BV·Filed 2022·Application pending·0 cites
- 2953US2024178304A1Semiconductor device with a monocrystalline extrinsic base and method thereforNXP BV·Filed 2022·Application pending·0 cites
- 3052US11217675B2Trench with different transverse cross-sectional widthsNXP USA INC·Filed 2020·Granted Jan 4, 2022·0 cites·22 claims
- 3152US8603883B2Interface control in a bipolar junction transistorCHAN KEVIN K·Filed 2011·Granted Dec 10, 2013·0 cites·11 claims
- 3251US11855173B2Transistor with monocrystalline base structuresNXP USA INC·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3349US11387348B2Transistor formed with spacerNXP USA INC·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 3448US12057499B2Transistor devices with termination regionsNXP USA INC·Filed 2020·Granted Aug 6, 2024·0 cites·21 claims
- 3547US11075110B1Transistor trench with field plate structureNXP USA INC·Filed 2020·Granted Jul 27, 2021·0 cites·20 claims
- 3647US10607880B2Die with buried doped isolation regionNXP USA INC·Filed 2018·Granted Mar 31, 2020·0 cites·9 claims
- 3746US11329156B2Transistor with extended drain regionNXP USA INC·Filed 2019·Granted May 10, 2022·0 cites·11 claims
- 3845US10600879B2Transistor trench structure with field plate structuresNXP USA INC·Filed 2018·Granted Mar 24, 2020·0 cites·10 claims
- 3943US10749023B2Vertical transistor with extended drain regionNXP USA INC·Filed 2018·Granted Aug 18, 2020·0 cites·13 claims
- 4041US10749028B2Transistor with gate/field plate structureNXP USA INC·Filed 2018·Granted Aug 18, 2020·0 cites·17 claims
- 4140US2020098912A1Transistor devices with control-terminal field plate structures in trenchesNXP USA INC·Filed 2018·Application pending·0 cites
- 4233US2015325685A1Power Semiconductor Device with Low RDSON and High Breakdown VoltageINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →