Inventor · disambiguated record
Lothar Blossfeld
Also filed as: BLOSSFELD LOTHAR
26 granted patents·504 citations·filing 1974–2005
97Inventor score
Top patents by PatentIndex Score
26 records- 0195US7119538B2Offset-reduced hall sensorMICRONAS GMBH·Filed 2004·Granted Oct 10, 2006·67 cites·8 claims
- 0294US5406202AOffset-compensated hall sensor having plural hall detectors having different geometrical orientations and having switchable directionsITT IND GMBH DEUTSCHE·Filed 1992·Granted Apr 11, 1995·119 cites·20 claims
- 0380US5790046ASensor with a programmable switching thresholdITT INDUSTREIS GMBH DEUTSCHE·Filed 1995·Granted Aug 4, 1998·49 cites·22 claims
- 0479US6437581B1Two wire sensor deviceMICRONAS GMBH·Filed 2000·Granted Aug 20, 2002·25 cites·13 claims
- 0573US7262591B2Technique for sensing the rotational speed and angular position of a rotating wheelMICRONAS GMBH·Filed 2005·Granted Aug 28, 2007·7 cites·3 claims
- 0672US6424143B1Process for monitoring the function of a sensor module and a sensor module to perform the processMICRONAS GMBH·Filed 1999·Granted Jul 23, 2002·30 cites·19 claims
- 0771US6965227B2Technique for sensing the rotational speed and angular position of a rotating wheel using a variable thresholdMICRONAS GMBH·Filed 2000·Granted Nov 15, 2005·14 cites·14 claims
- 0867US5530394ACMOS circuit with increased breakdown strengthITT IND GMBH DEUTSCHE·Filed 1994·Granted Jun 25, 1996·26 cites·21 claims
- 0965US4778774AProcess for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistorITT IND GMBH DEUTSCHE·Filed 1987·Granted Oct 18, 1988·33 cites·8 claims
- 1064US7124655B2Two-wire sensor for measuring a physical parameterMICRONAS GMBH·Filed 2002·Granted Oct 24, 2006·7 cites·8 claims
- 1158US4477965AProcess for manufacturing a monolithic integrated solid-state circuit comprising at least one bipolar planar transistorITT·Filed 1982·Granted Oct 23, 1984·14 cites·17 claims
- 1253US4992843ACollector contact of an integrated bipolar transistorITT IND GMBH DEUTSCHE·Filed 1989·Granted Feb 12, 1991·24 cites·2 claims
- 1352US4550490AMonolithic integrated circuitITT·Filed 1984·Granted Nov 5, 1985·11 cites·4 claims
- 1449US6320430B1Method and apparatus for processing a measurement signalMICRONAS GMBH·Filed 2000·Granted Nov 20, 2001·4 cites·9 claims
- 1546US7369960B2Device and method for detecting an angular position of a rotating objectMICRONAS GMBH·Filed 2003·Granted May 6, 2008·2 cites·25 claims
- 1646US5583367AMonolithic integrated sensor circuit in CMOS technologyITT IND GMBH DEUTSCHE·Filed 1995·Granted Dec 10, 1996·10 cites·3 claims
- 1745US4483738AMethod for manufacturing bipolar planar transistorsITT·Filed 1984·Granted Nov 20, 1984·12 cites·6 claims
- 1842US6847206B1Integrated circuit with a sensor element for providing an encoded output signalMICRONAS GMBH·Filed 1999·Granted Jan 25, 2005·7 cites·18 claims
- 1942US5504361APolarity-reversal protection for integrated electronic circuits in CMOS technologyITT IND GMBH DEUTSCHE·Filed 1994·Granted Apr 2, 1996·8 cites·19 claims
- 2041US4043849APlanar diffusion method for an I2 L circuit including a bipolar analog circuit partITT·Filed 1975·Granted Aug 23, 1977·8 cites·8 claims
- 2138US6144229ASensor deviceMICRONAS INTERMETALL GMBH·Filed 1998·Granted Nov 7, 2000·6 cites·16 claims
- 2238US4882297AMethod of making a self-aligned silicide contact using polysilicon electrode as an etch maskITT IND GMBH DEUTSCHE·Filed 1988·Granted Nov 21, 1989·6 cites·16 claims
- 2336US4346313AMonolithic integrated threshold switchITT·Filed 1976·Granted Aug 24, 1982·2 cites·7 claims
- 2435US4509250AProcess for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistorITT·Filed 1983·Granted Apr 9, 1985·6 cites·4 claims
- 2532US3936630AIntegrated semiconductor device for scanning an imageITT·Filed 1974·Granted Feb 3, 1976·1 cites·8 claims
- 2629US4786610AMethod of making a monolithic integrated circuit comprising at least one bipolar planar transistorBLOSSFELD LOTHAR·Filed 1987·Granted Nov 22, 1988·6 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →