Inventor · disambiguated record

Lung-Kun Chu

Also filed as: CHU LUNG-KUN

74 granted patents·53 pending applications·118 citations·filing 2016–2025

98Inventor score

Technology areasH10P H10D H10W B82Y H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD127

Top patents by PatentIndex Score

127 records

0199US11615962B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
0299US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
0399US11450664B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
0499US11387346B2Gate patterning process for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·11 cites·20 claims
0598US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
0698US11600533B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·4 cites·20 claims
0798US11257815B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·4 cites·20 claims
0898US11145734B1Semiconductor device with dummy fin and liner and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·7 cites·20 claims
0997US12119391B2Fin-based semiconductor device structure including self-aligned contacts and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·2 cites·20 claims
1097US11996334B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
1197US11961840B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
1296US12170231B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·2 cites·20 claims
1396US12107131B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
1496US11862633B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
1595US12087772B2Nanosheet device architecture for cell-height scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·2 cites·20 claims
1695US12062693B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·2 cites·20 claims
1795US11894367B2Integrated circuit including dipole incorporation for threshold voltage tuning in transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
1895US11791218B2Dipole patterning for CMOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·3 cites·18 claims
1995US11594614B2P-metal gate first gate replacement process for multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·3 cites·20 claims
2094US11728401B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
2194US10937704B1Mixed workfunction metal for nanosheet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·8 cites·20 claims
2293US11894460B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·19 claims
2393US11563109B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·2 cites·20 claims
2493US11205650B2Input/output semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·6 cites·20 claims
2592US11670692B2Gate-all-around devices having self-aligned capping between channel and backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
2691US11374105B2Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
2791US11264288B2Gate structure and patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·4 cites·20 claims
2890US2025359115A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2989US11948987B2Self-aligned backside source contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 2, 2024·2 cites·20 claims
3089US10867867B2Methods of fabricating semiconductor devices with mixed threshold voltages boundary isolation of multiple gates and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
3189US2025324753A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3287US12477766B2Semiconductor transistor device structure including nanostructure and gate structure with protection layer and fill layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
3387US12396248B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
3487US12389675B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·18 claims
3587US11869955B2Integrated circuit with nanosheet transistors with robust gate oxideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 9, 2024·1 cites·20 claims
3687US11676866B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·1 cites·20 claims
3787US2025331286A1Semiconductor Device Fabrication Methods And Structures ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3887US2025357129A1Fluorine incorporation method for nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3985US11670723B2Silicon channel temperingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·1 cites·20 claims
4085US2024387687A1Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4184US12507474B2Input/output semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
4284US12266544B2Reversed tone patterning method for dipole incorporation for multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
4384US12166100B2Nanosheet device with dipole dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
4484US12148750B2Work function design to increase density of nanosheet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
4584US11024545B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·2 cites·20 claims
4684US2025324636A1Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4784US2025316495A1Nanostructure Field-Effect Transistor Device and Method of FormingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4884US2025040233A1Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4983US12451359B2Fluorine incorporation method for nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
5083US12324219B2Integrated circuit including dipole incorporation for threshold voltage tuning in transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims

Showing the top 50 of 127 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →