Inventor · disambiguated record
Lurng-Shehng Lee
Also filed as: LEE LURNG-SHEHNG
21 granted patents·6 pending applications·638 citations·filing 1998–2021
94Inventor score
Files withIND TECH RES INST18HESTIA POWER INC4HESTIA POWER SHANGHAI TECH INC1INDUSTRAIL TECHNOLOGY RES INST1LIN CHA-HSIN1
Top patents by PatentIndex Score
27 records- 0197US9368650B1SiC junction barrier controlled schottky rectifierHESTIA POWER INC·Filed 2015·Granted Jun 14, 2016·21 cites·11 claims
- 0297US7405166B2Method of manufacturing charge storage deviceIND TECH RES INST·Filed 2006·Granted Jul 29, 2008·550 cites·23 claims
- 0393US9246016B1Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2015·Granted Jan 26, 2016·11 cites·15 claims
- 0487US10483389B2Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2015·Granted Nov 19, 2019·6 cites·23 claims
- 0583US7700988B2Metal-insulator-metal capacitorINDUSTRAIL TECHNOLOGY RES INST·Filed 2006·Granted Apr 20, 2010·13 cites·5 claims
- 0683US7683374B2Silicon based photodetectorIND TECH RES INST·Filed 2005·Granted Mar 23, 2010·7 cites·13 claims
- 0773US7663177B2Non-volatile memory device and fabricating method thereofIND TECH RES INST·Filed 2005·Granted Feb 16, 2010·6 cites·10 claims
- 0868US9018640B1Silicon carbide power device equipped with termination structureHESTIA POWER INC·Filed 2014·Granted Apr 28, 2015·2 cites·12 claims
- 0968US7851843B2DRAM cylindrical capacitorIND TECH RES INST·Filed 2008·Granted Dec 14, 2010·3 cites·12 claims
- 1065US7332393B2Method of fabricating a cylindrical capacitorIND TECH RES INST·Filed 2006·Granted Feb 19, 2008·3 cites·10 claims
- 1157US7456065B2Fabricating method of DRAM cylindrical capacitorIND TECH RES INST·Filed 2006·Granted Nov 25, 2008·1 cites·6 claims
- 1257US6991989B2Process of forming high-k gate dielectric layer for metal oxide semiconductor transistorIND TECH RES INST·Filed 2004·Granted Jan 31, 2006·8 cites·13 claims
- 1356US8956963B2Schottky barrier diode and fabricating method thereofIND TECH RES INST·Filed 2013·Granted Feb 17, 2015·1 cites·9 claims
- 1453US11615959B2Silicon carbide semiconductor device and manufacturing method thereofHESTIA POWER SHANGHAI TECH INC·Filed 2021·Granted Mar 28, 2023·0 cites·13 claims
- 1551US7589373B2Semiconductor deviceIND TECH RES INST·Filed 2009·Granted Sep 15, 2009·0 cites·17 claims
- 1650US7781298B2Methods for fabricating a capacitorIND TECH RES INST·Filed 2008·Granted Aug 24, 2010·0 cites·18 claims
- 1749US2008023782A1Photo sensor and fabrication method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 1848US7498631B2Sensing memory deviceIND TECH RES INST·Filed 2006·Granted Mar 3, 2009·0 cites·19 claims
- 1947US2008094776A1Cylindrical capacitorIND TECH RES INST·Filed 2007·Application pending·0 cites
- 2045US7405122B2Methods for fabricating a capacitorIND TECH RES INST·Filed 2006·Granted Jul 29, 2008·0 cites·19 claims
- 2143US7408170B2Ultraviolet detectorIND TECH RES INST·Filed 2006·Granted Aug 5, 2008·0 cites·18 claims
- 2242US11984499B2Silicon carbide semiconductor deviceSHANGHAI HESTIA POWER INC·Filed 2021·Granted May 14, 2024·0 cites·11 claims
- 2339US2007166917A1Non-volatile memory device and fabricating method thereforIND TECH RES INST·Filed 2006·Application pending·0 cites
- 2438US6103582AMethod to suppress boron penetration in P+ mosfetsIND TECH RES INST·Filed 1998·Granted Aug 15, 2000·6 cites·14 claims
- 2536US2007145525A1Mim capacitor structure and method of manufacturing the sameIND TECH RES INST·Filed 2006·Application pending·0 cites
- 2632US2008019168A1Memory structure and data writing method thereofLIN CHA-HSIN·Filed 2006·Application pending·0 cites
- 2731US2003219963A1Self-aligned method for fabricating epitaxial base bipolar transistor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →