Inventor · disambiguated record
Luciano Mule'Stagno
Also filed as: MULE STAGNO LUCIANO
6 granted patents·1 pending application·94 citations·filing 1999–2004
85Inventor score
Files withMEMC ELECTRONIC MATERIALS7
Top patents by PatentIndex Score
7 records- 0178US6284039B1Epitaxial silicon wafers substantially free of grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Sep 4, 2001·27 cites·35 claims
- 0273US6808781B2Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the sameMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 26, 2004·19 cites·48 claims
- 0372US6638357B2Method for revealing agglomerated intrinsic point defects in semiconductor crystalsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Oct 28, 2003·22 cites·15 claims
- 0470US7201800B2Process for making silicon wafers with stabilized oxygen precipitate nucleation centersMEMC ELECTRONIC MATERIALS·Filed 2004·Granted Apr 10, 2007·15 cites·28 claims
- 0565US6635587B1Method for producing czochralski silicon free of agglomerated self-interstitial defectsMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Oct 21, 2003·6 cites·55 claims
- 0657US7097718B2Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Aug 29, 2006·5 cites·22 claims
- 0739US2003196587A1Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →