Inventor · disambiguated record
Luther-King Ngwendson
Also filed as: NGWENDSON LUTHER-KING · NGWENDSON LUTHER-KING EKONDE
6 granted patents·3 pending applications·4 citations·filing 2015–2021
68Inventor score
Top patents by PatentIndex Score
9 records- 0175US9899477B2Edge termination structure having a termination charge region below a recessed field oxide regionINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Feb 20, 2018·4 cites·18 claims
- 0246US12317561B2SIC MOSFET structures with asymmetric trench oxideDYNEX SEMICONDUCTOR LTD·Filed 2020·Granted May 27, 2025·0 cites·6 claims
- 0345US12471327B2Semiconductor deviceDYNEX SEMICONDUCTOR LTD·Filed 2021·Granted Nov 11, 2025·0 cites·16 claims
- 0445US2024222480A1Igbt deviceDYNEX SEMICONDUCTOR LTD·Filed 2021·Application pending·0 cites
- 0544US11569371B2Semiconductor deviceDYNEX SEMICONDUCTOR LTD·Filed 2017·Granted Jan 31, 2023·0 cites·19 claims
- 0644US11239351B2Semiconductor device with a LOCOS trenchDYNEX SEMICONDUCTOR LTD·Filed 2018·Granted Feb 1, 2022·0 cites·20 claims
- 0739US12166111B2Reverse conducting IGBT with controlled anode injectionDYNEX SEMICONDUCTOR LTD·Filed 2020·Granted Dec 10, 2024·0 cites·17 claims
- 0839US2022320322A1Igbt with a variation of trench oxide thickness regionsDYNEX SEMICONDUCTOR LTD·Filed 2020·Application pending·0 cites
- 0937US2022320310A1Method of forming asymmetric thickness oxide trenchesDYNEX SEMICONDUCTOR LTD·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →