Inventor · disambiguated record
Lucian Prejbeanu
Also filed as: PREJBEANU LUCIAN
11 granted patents·2 pending applications·25 citations·filing 2008–2019
85Inventor score
Top patents by PatentIndex Score
13 records- 0188US10978234B2Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stackCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Apr 13, 2021·5 cites·20 claims
- 0280US10818329B2Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junctionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Oct 27, 2020·2 cites·20 claims
- 0380US7898833B2Magnetic element with thermally-assisted writingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Mar 1, 2011·12 cites·11 claims
- 0475US9917247B2Structure for thermally assisted MRAMIBM·Filed 2016·Granted Mar 13, 2018·3 cites·20 claims
- 0560US9406870B2Multibit self-reference thermally assisted MRAMIBM·Filed 2014·Granted Aug 2, 2016·0 cites·5 claims
- 0660US8576615B2Magnetic random access memory devices including multi-bit cellsEL BARAJI MOURAD·Filed 2011·Granted Nov 5, 2013·3 cites·20 claims
- 0754US9786837B2Multibit self-reference thermally assisted MRAMIBM·Filed 2015·Granted Oct 10, 2017·0 cites·16 claims
- 0854US9786836B2Multibit self-reference thermally assisted MRAMIBM·Filed 2015·Granted Oct 10, 2017·0 cites·10 claims
- 0950US10236438B2Multibit self-reference thermally assisted MRAMIBM·Filed 2017·Granted Mar 19, 2019·0 cites·18 claims
- 1047US9515251B2Structure for thermally assisted MRAMIBM·Filed 2014·Granted Dec 6, 2016·0 cites·16 claims
- 1144US2015129946A1Self reference thermally assisted mram with low moment ferromagnet storage layerIBM·Filed 2014·Application pending·0 cites
- 1240US2016240773A1Self reference thermally assisted mram with low moment ferromagnet storage layerIBM·Filed 2016·Application pending·0 cites
- 1339US10930841B2Magnetic tunnel junction with perpendicular shape anisotropy and minimised variability, memory point and logic element including the magnetic tunnel junction, method for manufacturing the magnetic tunnel junctionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Feb 23, 2021·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →