Inventor · disambiguated record
Luc Thomas
Also filed as: THOMAS LUC
39 granted patents·4 pending applications·757 citations·filing 1979–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21HEADWAY TECH INC10IBM8PARKIN STUART STEPHEN PAPWORTH2CIT ALCATEL1
Top patents by PatentIndex Score
43 records- 0198US10014465B1Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyHEADWAY TECH INC·Filed 2017·Granted Jul 3, 2018·22 cites·13 claims
- 0298US9466319B1Perpendicular magnetic recording (PMR) write shield design with minimized wide adjacent track erasure (WATE)HEADWAY TECH INC·Filed 2015·Granted Oct 11, 2016·87 cites·24 claims
- 0398US6166948AMagnetic memory array with magnetic tunnel junction memory cells having flux-closed free layersIBM·Filed 1999·Granted Dec 26, 2000·386 cites·17 claims
- 0497US10797225B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·10 cites·33 claims
- 0596US10522746B1Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·16 cites·20 claims
- 0696US9425387B1Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealingHEADWAY TECH INC·Filed 2015·Granted Aug 23, 2016·59 cites·31 claims
- 0794US10658577B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
- 0894US8687415B2Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfacesPARKIN STUART STEPHEN PAPWORTH·Filed 2012·Granted Apr 1, 2014·37 cites·44 claims
- 0992US10950782B2Nitride diffusion barrier structure for spintronic applicationsHEADWAY TECH INC·Filed 2019·Granted Mar 16, 2021·4 cites·17 claims
- 1092US7626844B1Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscapeIBM·Filed 2008·Granted Dec 1, 2009·35 cites·19 claims
- 1188US11264560B2Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applicationsHEADWAY TECH INC·Filed 2019·Granted Mar 1, 2022·3 cites·17 claims
- 1287US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
- 1386US7667994B1Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscapeIBM·Filed 2009·Granted Feb 23, 2010·18 cites·7 claims
- 1485US10475564B2Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 12, 2019·5 cites·17 claims
- 1585US10431736B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·1 cites·20 claims
- 1685US2024379270A1Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of OxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1781US12501836B2Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 1880US7492622B2Sequence of current pulses for depinning magnetic domain wallsIBM·Filed 2007·Granted Feb 17, 2009·11 cites·1 claims
- 1978US7760535B2Sequence of current pulses for depinning magnetic domain wallsIBM·Filed 2008·Granted Jul 20, 2010·9 cites·24 claims
- 2078US2025338775A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2177US11264566B2Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratioHEADWAY TECH INC·Filed 2019·Granted Mar 1, 2022·1 cites·14 claims
- 2276US11569441B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 2376US10788561B2Method for measuring saturation magnetization of magnetic films and multilayer stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·1 cites·20 claims
- 2476US10754000B2Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic filmsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·68 claims
- 2576US4285044ADigital generator for producing a sinewaveCIT ALCATEL·Filed 1979·Granted Aug 18, 1981·36 cites·9 claims
- 2673US8934289B2Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junctionIBM·Filed 2012·Granted Jan 13, 2015·4 cites·11 claims
- 2773US8923039B2Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junctionIBM·Filed 2012·Granted Dec 30, 2014·4 cites·7 claims
- 2871US12082509B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 3, 2024·0 cites·20 claims
- 2970US12356865B2Multilayer structure for reducing film roughness in magnetic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 8, 2025·0 cites·20 claims
- 3069US12249450B2Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 11, 2025·0 cites·20 claims
- 3169US11609296B2Method for measuring saturation magnetization of magnetic films and multilayer stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 3269US11237240B2Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic filmsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 3367US11683994B2Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratioHEADWAY TECH INC·Filed 2022·Granted Jun 20, 2023·0 cites·17 claims
- 3467US11397226B2Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 3567US2019088866A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesHEADWAY TECH INC·Filed 2018·Application pending·0 cites
- 3660US11092661B2Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 3758US10761154B2Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·20 claims
- 3857US10401464B2Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 3, 2019·0 cites·20 claims
- 3956US8638601B1Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfacesPARKIN STUART STEPHEN PAPWORTH·Filed 2012·Granted Jan 28, 2014·2 cites·28 claims
- 4055US11495738B2Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 8, 2022·0 cites·20 claims
- 4143US11895928B2Integration scheme for three terminal spin-orbit-torque (SOT) switching devicesHEADWAY TECH INC·Filed 2019·Granted Feb 6, 2024·0 cites·12 claims
- 4239US8767432B1Method and apparatus for controlled application of Oersted field to magnetic memory structureIBM·Filed 2012·Granted Jul 1, 2014·0 cites·16 claims
- 4335US2022410369A1Improved Artificial Muscle, Exoskeleton, Related Method and SystemEXOVIBE·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →