Inventor · disambiguated record
Makram Abd El Qader
Also filed as: ABD EL QADER MAKRAM
4 granted patents·13 pending applications·0 citations·filing 2021–2025
55Inventor score
Files withINTEL CORP17
Top patents by PatentIndex Score
17 records- 0169US12501684B2Integrated circuit structures with backside self-aligned penetrating conductive source or drain contactINTEL CORP·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 0268US2025227978A1Integrated circuit structures with backside self-aligned penetrating conductive source or drain contactINTEL CORP·Filed 2025·Application pending·0 cites
- 0367US12469780B2Integrated circuit structure with recessed self-aligned deep boundary viaINTEL CORP·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 0464US12484247B2Gate-all-around integrated circuit structures having backside contact with enhanced area relative to epitaxial sourceINTEL CORP·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 0554US2025098242A1Air gap insulation in place of gate spacersINTEL CORP·Filed 2023·Application pending·0 cites
- 0654US2025098239A1Air gap insulation in place of gate spacersINTEL CORP·Filed 2023·Application pending·0 cites
- 0753US2025220991A1Integrated circuit structure with direct backside source or drain contactINTEL CORP·Filed 2023·Application pending·0 cites
- 0852US2025220950A1Transistors with asymmetric source and drain contactsINTEL CORP·Filed 2023·Application pending·0 cites
- 0952US2025220978A1Integrated circuit structure with asymmetric epitaxial source or drain arrangementsINTEL CORP·Filed 2023·Application pending·0 cites
- 1052US2025105095A1Integrated circuit devices with vias having widened ends for power deliveryINTEL CORP·Filed 2023·Application pending·0 cites
- 1150US12382721B2Integrated circuit structures having cut metal gates with dielectric spacer fillINTEL CORP·Filed 2021·Granted Aug 5, 2025·0 cites·18 claims
- 1250US2024332172A1Integrated circuit structure with backside contact wideningINTEL CORP·Filed 2023·Application pending·0 cites
- 1350US2024332166A1Integrated circuit structures having air gapsINTEL CORP·Filed 2023·Application pending·0 cites
- 1449US2023317595A1Integrated circuit structures with pre-epitaxial deep via structureINTEL CORP·Filed 2022·Application pending·0 cites
- 1549US2024404917A1Self-aligned via patterning for backside interconnectsINTEL CORP·Filed 2023·Application pending·0 cites
- 1648US2024429294A1Integrated circuit structure with backside plug last approachINTEL CORP·Filed 2023·Application pending·0 cites
- 1747US2024332379A1Backside contact etch before cavity spacer formation for backside contact of transistor source/drainINTEL CORP·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →