Inventor · disambiguated record
Masatoshi Anma
Also filed as: ANMA MASATOSHI
3 granted patents·4 pending applications·88 citations·filing 1996–2004
68Inventor score
Top patents by PatentIndex Score
7 records- 0182US5729035ANon-volatile semiconductor device with multi-layered capacitor insulating filmMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 17, 1998·81 cites·2 claims
- 0249US6599809B2Method of manufacturing semiconductor device having a marking recessMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 29, 2003·7 cites·10 claims
- 0336US2004235241A1Method of manufacturing semiconductor device having capacitorRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 0435US6319812B1Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 20, 2001·0 cites·7 claims
- 0535US2004089891A1Semiconductor device including electrode or the like having opening closed and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 0630US2002190348A1Semiconductor device having anti-fuse structureMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 0729US2004206998A1Semiconductor device having a roughened surface electrode and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →