Inventor · disambiguated record
Masaharu Aoyama
Also filed as: AOYAMA MASAHARU · KUMAMARU KUNIAKI
19 granted patents·1,454 citations·filing 1977–1992
96Inventor score
Top patents by PatentIndex Score
19 records- 0199US5266526AMethod of forming trench buried wiring for semiconductor deviceTOSHIBA KK·Filed 1992·Granted Nov 30, 1993·511 cites·17 claims
- 0298US4618878ASemiconductor device having a multilayer wiring structure using a polyimide resinTOSHIBA KK·Filed 1984·Granted Oct 21, 1986·268 cites·7 claims
- 0398US4507673ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Mar 26, 1985·174 cites·5 claims
- 0487US4520041AMethod for forming metallization structure having flat surface on semiconductor substrateTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 28, 1985·65 cites·9 claims
- 0586US4334349AMethod of producing semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Jun 15, 1982·64 cites·14 claims
- 0681US4561009ASemiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Dec 24, 1985·41 cites·9 claims
- 0778US4634496AMethod for planarizing the surface of an interlayer insulating film in a semiconductor deviceTOSHIBA KK·Filed 1985·Granted Jan 6, 1987·52 cites·5 claims
- 0875US4433004ASemiconductor device and a method for manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Feb 21, 1984·32 cites·11 claims
- 0974US4766086AMethod of gettering a semiconductor device and forming an isolation region thereinTOSHIBA KK·Filed 1987·Granted Aug 23, 1988·46 cites·18 claims
- 1073US4636832ASemiconductor device with an improved bonding sectionTOKYO SHIBAURA ELECTRIC CO·Filed 1986·Granted Jan 13, 1987·41 cites·4 claims
- 1170US4613888ASemiconductor device of multilayer wiring structureTOSHIBA KK·Filed 1984·Granted Sep 23, 1986·30 cites·16 claims
- 1269US4853760ASemiconductor device having insulating layer including polyimide filmTOKYO SHIBAURA ELECTRIC CO·Filed 1987·Granted Aug 1, 1989·36 cites·8 claims
- 1365US4717682AMethod of manufacturing a semiconductor device with conductive trench sidewallsTOSHIBA KK·Filed 1986·Granted Jan 5, 1988·30 cites·5 claims
- 1456US4240096AFluorine-doped P type siliconTOKYO SHIBAURA ELECTRIC CO·Filed 1978·Granted Dec 16, 1980·14 cites·4 claims
- 1554US4728627AMethod of making multilayered interconnects using hillock studs formed by sinteringTOSHIBA KK·Filed 1986·Granted Mar 1, 1988·15 cites·13 claims
- 1642US4462856ASystem for etching a metal film on a semiconductor waferTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jul 31, 1984·10 cites·3 claims
- 1739US5175115AMethod of controlling metal thin film formation conditionsTOSHIBA KK·Filed 1991·Granted Dec 29, 1992·10 cites·10 claims
- 1838US4200969ASemiconductor device with multi-layered metalizationsTOKYO SHIBAURA ELECTRIC CO·Filed 1977·Granted May 6, 1980·6 cites·12 claims
- 1937US4403392AMethod of manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Sep 13, 1983·9 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Masaharu Aoyama files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →