Inventor · disambiguated record
Masahiro Araki
Also filed as: ARAKI MASAHIRO
25 granted patents·12 pending applications·360 citations·filing 2000–2024
95Inventor score
Top patents by PatentIndex Score
37 records- 0198US6455877B1III-N compound semiconductor deviceSHARP KK·Filed 2000·Granted Sep 24, 2002·138 cites·25 claims
- 0294US7157297B2Method for fabrication of semiconductor deviceSHARP KK·Filed 2005·Granted Jan 2, 2007·26 cites·16 claims
- 0390US7064357B2Nitride compound semiconductor light emitting device and method for producing the sameSHARP KK·Filed 2001·Granted Jun 20, 2006·27 cites·10 claims
- 0490US6586777B1Nitride semiconductor light emitting deviceSHARP KK·Filed 2000·Granted Jul 1, 2003·52 cites·14 claims
- 0588US7772611B2Nitride semiconductor device with depressed portionSHARP KK·Filed 2006·Granted Aug 10, 2010·11 cites·11 claims
- 0687US12051765B2Method for removal of devices using a trenchUNIV CALIFORNIA·Filed 2020·Granted Jul 30, 2024·2 cites·11 claims
- 0785US8963165B2Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor elementARAKI MASAHIRO·Filed 2011·Granted Feb 24, 2015·11 cites·23 claims
- 0884US8647904B2Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatusARAKI MASAHIRO·Filed 2011·Granted Feb 11, 2014·11 cites·16 claims
- 0983US7352012B2Nitride compound semiconductor light emitting device and method for producing the sameSHARP KK·Filed 2006·Granted Apr 1, 2008·7 cites·3 claims
- 1082US6714060B2Master slave flip-flop circuit functioning as edge trigger flip-flopRENESAS TECH CORP·Filed 2003·Granted Mar 30, 2004·26 cites·8 claims
- 1179US7663158B2Nitride compound semiconductor light emitting device and method for producing the sameSHARP KK·Filed 2007·Granted Feb 16, 2010·4 cites·3 claims
- 1279US7012283B2Nitride semiconductor light emitting element and optical device containing itSHARP KK·Filed 2001·Granted Mar 14, 2006·33 cites·46 claims
- 1376US8368183B2Nitride semiconductor deviceSHARP KK·Filed 2005·Granted Feb 5, 2013·4 cites·22 claims
- 1475US9543947B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 10, 2017·3 cites·14 claims
- 1572US2025164883A1Radiation-sensitive composition and pattern forming methodJSR CORP·Filed 2024·Application pending·0 cites
- 1671US8288794B2Nitride semiconductor layers on substrate having ridge portions with inflow prevention walls near engraved regionsKAMIKAWA TAKESHI·Filed 2010·Granted Oct 16, 2012·1 cites·13 claims
- 1764US8030110B2Nitride semiconductor light-emitting device and method for fabrication thereofSHARP KK·Filed 2010·Granted Oct 4, 2011·1 cites·4 claims
- 1855US2024079856A1Method of fabricating a resonant cavity and distributed bragg reflector mirrors for a vertical cavity surface emitting laser on a wing of an epitaxial lateral overgrowth regionUNIV CALIFORNIA·Filed 2020·Application pending·0 cites
- 1953US10615032B2Semiconductor device manufacturing methodKYOCERA CORP·Filed 2019·Granted Apr 7, 2020·0 cites·7 claims
- 2052US9257976B2Semiconductor device with touch sensor circuitRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 9, 2016·0 cites·5 claims
- 2152US8350609B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2012·Granted Jan 8, 2013·1 cites·8 claims
- 2250US10082919B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 25, 2018·0 cites·15 claims
- 2350US2013161640A1Nitride semiconductor deviceYAMADA EIJI·Filed 2012·Application pending·0 cites
- 2448US11379072B2Semiconductor device and semiconductor system having the sameRENESAS ELECTRONICS CORP·Filed 2020·Granted Jul 5, 2022·0 cites·13 claims
- 2548US8866153B2Functional element and manufacturing method of sameURATA AKIHIRO·Filed 2011·Granted Oct 21, 2014·1 cites·23 claims
- 2648US7903708B2Nitride semiconductor light-emitting device and method for fabrication thereofSHARP KK·Filed 2004·Granted Mar 8, 2011·1 cites·4 claims
- 2748US2023127257A1Method for removing a device using an epitaxial lateral overgrowth techniqueUNIV CALIFORNIA·Filed 2021·Application pending·0 cites
- 2848US2006065197A1Vapor deposition apparatusYAMADA EIJI·Filed 2005·Application pending·0 cites
- 2947US12065760B2Method of manufacturing semiconductor element, semiconductor element, and substrateKYOCERA CORP·Filed 2019·Granted Aug 20, 2024·0 cites·15 claims
- 3046US11360234B2Electrode device, semiconductor device, and semiconductor systemRENESAS ELECTRONICS CORP·Filed 2020·Granted Jun 14, 2022·0 cites·18 claims
- 3145US2022181210A1Method for removing a bar of one or more devices using supporting platesUNIV CALIFORNIA·Filed 2020·Application pending·0 cites
- 3244US2022165570A1Substrate for removal of devices using void portionsUNIV CALIFORNIA·Filed 2020·Application pending·0 cites
- 3343US2016110023A1Semiconductor device with touch sensor circuitRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3440US2004257124A1Spread spectrum clock generator capable of frequency modulation with high accuracyRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 3539US2006057824A1Apparatus for producing nitride semiconductor, method for producing nitride semiconductor, and semiconductor laser device obtained by the methodARAKI MASAHIRO·Filed 2005·Application pending·0 cites
- 3637US2009141774A1Spread spectrum clock generator capable of frequency modulation with high accuracyRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 3733US2011062016A1Method for manufacturing aluminum-containing nitride intermediate layer, method for manufacturing nitride layer, and method for manufacturing nitride semiconductor elementSHARP KK·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →