Inventor · disambiguated record
Maxime Argoud
Also filed as: ARGOUD MAXIME
9 granted patents·2 pending applications·6 citations·filing 2011–2024
77Inventor score
Top patents by PatentIndex Score
11 records- 0175US9427948B2Manufacturing a flexible structure by transfers of layersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Aug 30, 2016·4 cites·14 claims
- 0267US9219004B2Method of fabricating polymer film in the cavity of a waferMORICEAU HUBERT·Filed 2011·Granted Dec 22, 2015·2 cites·16 claims
- 0360US11688811B2Transistor comprising a channel placed under shear strain and fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jun 27, 2023·0 cites·6 claims
- 0460US2024411057A1Process for manufacturing a three-dimensional structure in bendingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 0551US10978594B2Transistor comprising a channel placed under shear strain and fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Apr 13, 2021·0 cites·13 claims
- 0648US11955585B2Method for coating chipsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Apr 9, 2024·0 cites·14 claims
- 0745US2014238213A1Method for performing a mechanical operation in a structure comprising two layers of different stiffnessCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Application pending·0 cites
- 0843US9599890B2Method for manufacturing a nanolithography maskARKEMA FRANCE·Filed 2013·Granted Mar 21, 2017·0 cites·21 claims
- 0942US10784108B2Method for forming a functionalised assembly guideCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Sep 22, 2020·0 cites·16 claims
- 1039US9076841B2Double layer transfer methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jul 7, 2015·0 cites·17 claims
- 1131US8906780B2Method for transferring a thin layer of monocrystalline siliconARGOUD MAXIME·Filed 2011·Granted Dec 9, 2014·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →