Inventor · disambiguated record
Makoto Asai
Also filed as: ASAI MAKOTO
46 granted patents·13 pending applications·751 citations·filing 1982–2024
98Inventor score
Top patents by PatentIndex Score
59 records- 0198US7138286B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2005·Granted Nov 21, 2006·47 cites·2 claims
- 0292US8278731B2Semiconductor device having SOI substrate and method for manufacturing the sameSUMITOMO MASAKIYO·Filed 2008·Granted Oct 2, 2012·20 cites·15 claims
- 0391US7977704B2Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistorDENSO CORP·Filed 2009·Granted Jul 12, 2011·19 cites·7 claims
- 0490US8097901B2Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistorKOYAMA MASAKI·Filed 2011·Granted Jan 17, 2012·11 cites·4 claims
- 0590US7838331B2Method for dicing semiconductor substrateDENSO CORP·Filed 2006·Granted Nov 23, 2010·16 cites·14 claims
- 0688US6008539AElectrodes for p-type group III nitride compound semiconductorsTOYODA GOSEI KK·Filed 1996·Granted Dec 28, 1999·76 cites·14 claims
- 0787US8815701B2Method for manufacturing semiconductor device having SOI substrateSUMITOMO MASAKIYO·Filed 2012·Granted Aug 26, 2014·8 cites·4 claims
- 0887US6005258ALight-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impuritiesTOYODA GOSEI KK·Filed 1997·Granted Dec 21, 1999·69 cites·13 claims
- 0985US6265726B1Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 1999·Granted Jul 24, 2001·62 cites·9 claims
- 1085US5364977AClathrate compounds comprising tetrakisphenols as hostNIPPON SODA CO·Filed 1993·Granted Nov 15, 1994·31 cites·11 claims
- 1183US9466711B2Semiconductor deviceMOMOTA SEIJI·Filed 2009·Granted Oct 11, 2016·9 cites·18 claims
- 1283US7999314B2Semiconductor device and manufacturing method thereofDENSO CORP·Filed 2008·Granted Aug 16, 2011·7 cites·38 claims
- 1383US7867800B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2007·Granted Jan 11, 2011·5 cites·3 claims
- 1483US7178400B2Physical quantity sensor having multiple through holesDENSO CORP·Filed 2005·Granted Feb 20, 2007·11 cites·5 claims
- 1583US6452214B2Group III nitride compound semiconductor light-emitting device having a light emission output of high light intensityTOYODA GOSEI KK·Filed 2000·Granted Sep 17, 2002·47 cites·6 claims
- 1680US6806571B2III nitride compound semiconductor element an electrode forming methodTOYODA GOSEI KK·Filed 2001·Granted Oct 19, 2004·20 cites·2 claims
- 1777US7332366B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2006·Granted Feb 19, 2008·3 cites·2 claims
- 1877US4732731ACopper alloy for electronic instruments and method of manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 1986·Granted Mar 22, 1988·50 cites·7 claims
- 1976US9099387B2Semiconductor deviceTSUZUKI YUKIO·Filed 2011·Granted Aug 4, 2015·3 cites·4 claims
- 2076US7018915B2Group III nitride compound semiconductor device and method for forming an electrodeTOYODA GOSEI KK·Filed 2004·Granted Mar 28, 2006·15 cites·7 claims
- 2176US6933169B2Optical semiconductor deviceTOYODA GOSEI KK·Filed 2003·Granted Aug 23, 2005·20 cites·8 claims
- 2276US6121127AMethods and devices related to electrodes for p-type group III nitride compound semiconductorsTOYODA GOSEI KK·Filed 1999·Granted Sep 19, 2000·38 cites·16 claims
- 2375US7015515B2Group III nitride compound semiconductor device having a superlattice structureTOYODA GOSEI KK·Filed 2002·Granted Mar 21, 2006·18 cites·22 claims
- 2474US5650641ASemiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such deviceTOYODA GOSEI KK·Filed 1995·Granted Jul 22, 1997·56 cites·28 claims
- 2572US7337670B2Physical quantity sensor having multiple through holesDENSO CORP·Filed 2007·Granted Mar 4, 2008·6 cites·12 claims
- 2670US7662668B2Method for separating a semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrateDENSO CORP·Filed 2006·Granted Feb 16, 2010·3 cites·1 claims
- 2767US2014239313A1Light-emitting semiconductor device using group iii nitrogen compoundTOYODA GOSEI KK·Filed 2014·Application pending·0 cites
- 2866US11749675B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·5 claims
- 2965US10787986B2Fuel pump control deviceDENSO CORP·Filed 2018·Granted Sep 29, 2020·0 cites·12 claims
- 3064US7271459B2Physical quantity sensorDENSO CORP·Filed 2005·Granted Sep 18, 2007·1 cites·3 claims
- 3163US8253222B2Semiconductor device and fabrication method of semiconductor deviceMOMOTA SEIJI·Filed 2011·Granted Aug 28, 2012·2 cites·3 claims
- 3263US6191436B1Optical semiconductor deviceTOYODA GOSEI KK·Filed 1996·Granted Feb 20, 2001·24 cites·9 claims
- 3363US2015014903A1Die for extrusion molding, method of producing die for extrusion molding, and method of producing honeycomb structured bodyIBIDEN CO LTD·Filed 2014·Application pending·0 cites
- 3462US6573114B1Optical semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Jun 3, 2003·8 cites·10 claims
- 3562US2012217510A1Light-emitting semiconductor device using group iii nitrogen compoundMANABE KATSUHIDE·Filed 2012·Application pending·0 cites
- 3660US6762070B2Method of manufacturing group III nitride compound semiconductor light emitting device having a light emission output of high light intensityTOYODA GOSEI KK·Filed 2002·Granted Jul 13, 2004·9 cites·6 claims
- 3760US5021105ACopper alloy for electronic instrumentsFURUKAWA ELECTRIC CO LTD·Filed 1989·Granted Jun 4, 1991·27 cites·6 claims
- 3859US11401594B2Hot-rolled steel sheet for coiled tubing and method for manufacturing the sameJFE STEEL CORP·Filed 2019·Granted Aug 2, 2022·0 cites·4 claims
- 3959US2016229083A1Method of producing die for extrusion molding and method of producing honeycomb structured bodyIBIDEN CO LTD·Filed 2016·Application pending·0 cites
- 4059US2011101412A1Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2011·Application pending·0 cites
- 4156US7001790B2Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 2001·Granted Feb 21, 2006·3 cites·3 claims
- 4255US10916541B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Feb 9, 2021·0 cites·6 claims
- 4354US7326586B2Method for manufacturing semiconductor physical quantity sensorDENSO CORP·Filed 2005·Granted Feb 5, 2008·1 cites·6 claims
- 4454US2025021727A1Design assistance system and design assistance methodTOPPAN HOLDINGS INC·Filed 2024·Application pending·0 cites
- 4553US6861663B2Group III nitride compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Mar 1, 2005·6 cites·26 claims
- 4652US11480144B2Fuel supply systemDENSO CORP·Filed 2019·Granted Oct 25, 2022·0 cites·14 claims
- 4752US7465599B2Method for manufacturing physical quantity sensorDENSO CORP·Filed 2007·Granted Dec 16, 2008·0 cites·7 claims
- 4847US10605506B2Heat pumpYANMAR CO LTD·Filed 2016·Granted Mar 31, 2020·0 cites·20 claims
- 4946US2015014902A1Die for extrusion molding, method of producing die for extrusion molding, and method of producing honeycomb structured bodyIBIDEN CO LTD·Filed 2014·Application pending·0 cites
- 5045US8691635B2Fabrication method of semiconductor deviceMOMOTA SEIJI·Filed 2012·Granted Apr 8, 2014·0 cites·7 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →