Inventor · disambiguated record
Masamichi Asano
Also filed as: ASANO MASAMICHI
92 granted patents·5 pending applications·3,060 citations·filing 1980–2019
99Inventor score
Files withTOSHIBA KK58TOKYO SHIBAURA ELECTRIC CO19UNISANTIS ELECT SINGAPORE PTE14MAEDA KENGO4TAKIZAWA MAKOTO1
Top patents by PatentIndex Score
97 records- 0198US5297029ASemiconductor memory deviceTOSHIBA KK·Filed 1992·Granted Mar 22, 1994·204 cites·6 claims
- 0296US5361227ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1992·Granted Nov 1, 1994·103 cites·130 claims
- 0396US4799195ASemiconductor memory device with a sense amplifierTOSHIBA KK·Filed 1988·Granted Jan 17, 1989·120 cites·6 claims
- 0496US4556961ASemiconductor memory with delay means to reduce peak currentsTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Dec 3, 1985·88 cites·2 claims
- 0596US4473762ASemiconductor integrated circuit with a response time compensated with respect to temperatureTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 25, 1984·103 cites·27 claims
- 0694US4916334AHigh voltage booster circuit for use in EEPROMsTOSHIBA KK·Filed 1988·Granted Apr 10, 1990·106 cites·14 claims
- 0793US7139201B2Non-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 2005·Granted Nov 21, 2006·24 cites·74 claims
- 0893US4509148ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Apr 2, 1985·52 cites·1 claims
- 0992US5428569ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Jun 27, 1995·92 cites·42 claims
- 1092US4819212ANonvolatile semiconductor memory device with readout test circuitryTOSHIBA KK·Filed 1987·Granted Apr 4, 1989·84 cites·17 claims
- 1192US4794562AElectrically-erasable/programmable nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1987·Granted Dec 27, 1988·75 cites·11 claims
- 1291US6172911B1Non-volatile semiconductor memory device with an improved verify voltage generatorTOSHIBA KK·Filed 1999·Granted Jan 9, 2001·54 cites·10 claims
- 1391US5371702ABlock erasable nonvolatile memory deviceTOSHIBA KK·Filed 1993·Granted Dec 6, 1994·89 cites·13 claims
- 1491US4597062ANon-volatile semiconductor memory systemTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Jun 24, 1986·47 cites·7 claims
- 1590US5724300ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1997·Granted Mar 3, 1998·50 cites·44 claims
- 1690US5095461AErase circuitry for a non-volatile semiconductor memory deviceTOSHIBA KK·Filed 1989·Granted Mar 10, 1992·61 cites·42 claims
- 1790US5053841ANonvolatile semiconductor memoryTOSHIBA KK·Filed 1989·Granted Oct 1, 1991·66 cites·6 claims
- 1889US9590631B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2016·Granted Mar 7, 2017·6 cites·28 claims
- 1989US4385337ACircuit including an MOS transistor whose gate is protected from oxide ruptureTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted May 24, 1983·50 cites·14 claims
- 2088US4495693AMethod of integrating MOS devices of double and single gate structureTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jan 29, 1985·71 cites·9 claims
- 2188US4365316AMultifunction terminal circuitTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Dec 21, 1982·44 cites·13 claims
- 2287US9117528B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Aug 25, 2015·5 cites·19 claims
- 2387US5615165ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1995·Granted Mar 25, 1997·43 cites·135 claims
- 2486US5546351ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1994·Granted Aug 13, 1996·65 cites·29 claims
- 2586US4506350ANon-volatile semiconductor memory systemTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Mar 19, 1985·34 cites·13 claims
- 2685US5034926ANon-volatile semiconductor memoryTOSHIBA KK·Filed 1989·Granted Jul 23, 1991·51 cites·16 claims
- 2784US10311945B2Semiconductor device with a plurality of surrounding gate transistorsUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Jun 4, 2019·6 cites·25 claims
- 2884US6967892B2Non-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 2004·Granted Nov 22, 2005·27 cites·102 claims
- 2984US5124948AMask ROM with spare memory cellsTAKIZAWA MAKOTO·Filed 1991·Granted Jun 23, 1992·72 cites·14 claims
- 3084US4612462ALogic circuit having voltage boosterTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Sep 16, 1986·34 cites·21 claims
- 3183US9646991B2Semiconductor device with surrounding gate transistors in a NOR circuitUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted May 9, 2017·4 cites·5 claims
- 3283US6781895B1Non-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 2000·Granted Aug 24, 2004·27 cites·9 claims
- 3383US4425632ANonvolatile semiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Jan 10, 1984·31 cites·39 claims
- 3482US9716092B2Semiconductor device with surrounding gate transistors in a NAND circuitUNISANTIS ELECT SINGAPORE PTE·Filed 2016·Granted Jul 25, 2017·3 cites·5 claims
- 3582US5055706ADelay circuit that resets after pulse-like noiseTOSHIBA KK·Filed 1989·Granted Oct 8, 1991·30 cites·1 claims
- 3682US4979146AElectrically erasable non-volatile semiconductor deviceTOSHIBA KK·Filed 1989·Granted Dec 18, 1990·43 cites·10 claims
- 3782US4922133AVoltage detecting circuitTOSHIBA KK·Filed 1988·Granted May 1, 1990·29 cites·10 claims
- 3881US4447895ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted May 8, 1984·25 cites·5 claims
- 3980US10910039B2Semiconductor device with a plurality of surrounding gate transistorsUNISANTIS ELECT SINGAPORE PTE·Filed 2019·Granted Feb 2, 2021·2 cites·25 claims
- 4080US5793696ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1997·Granted Aug 11, 1998·27 cites·13 claims
- 4180US5420822ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted May 30, 1995·34 cites·51 claims
- 4279US5909399ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1998·Granted Jun 1, 1999·26 cites·22 claims
- 4379US5592001ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Jan 7, 1997·40 cites·6 claims
- 4478US5818791ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1997·Granted Oct 6, 1998·24 cites·5 claims
- 4578US5519654ASemiconductor memory device with external capacitor to charge pump in an EEPROM circuitTOSHIBA KK·Filed 1995·Granted May 21, 1996·45 cites·48 claims
- 4678US5436913ANon-volatile semiconductor memory device using successively longer write pulsesTOSHIBA KK·Filed 1993·Granted Jul 25, 1995·38 cites·10 claims
- 4778US4970686ASemiconductor memory cells and semiconductor memory device employing the semiconductor memory cellsTOSHIBA KK·Filed 1989·Granted Nov 13, 1990·38 cites·10 claims
- 4876US9484424B2Semiconductor device with a NAND circuit having four transistorsUNISANTIS ELECT SINGAPORE PTE·Filed 2015·Granted Nov 1, 2016·3 cites·16 claims
- 4976US4692834AElectrostatic discharge protection circuit with variable limiting threshold for MOS deviceTOSHIBA KK·Filed 1985·Granted Sep 8, 1987·34 cites·12 claims
- 5074US9641179B2Semiconductor deviceUNISANTIS ELECT SINGAPORE PTE·Filed 2016·Granted May 2, 2017·2 cites·28 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →