Inventor · disambiguated record
Madhur Bobde
Also filed as: BOBDE MADHUR
172 granted patents·19 pending applications·1,214 citations·filing 2006–2025
99Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR81BOBDE MADHUR37ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD19ALPHA & OMEGA SEMICONDUCTOR INT LP19GUAN LINGPENG12
Top patents by PatentIndex Score
191 records- 0198US9312381B1Lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Apr 12, 2016·17 cites·20 claims
- 0297US9583586B1Transient voltage suppressor (TVS) with reduced breakdown voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Feb 28, 2017·19 cites·22 claims
- 0397US9190512B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 17, 2015·20 cites·9 claims
- 0497US8809948B1Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·34 cites·18 claims
- 0597US8753935B1High frequency switching MOSFETs with low output capacitance using a depletable P-shieldBOBDE MADHUR·Filed 2012·Granted Jun 17, 2014·33 cites·20 claims
- 0697US7781826B2Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filterALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Aug 24, 2010·57 cites·12 claims
- 0796US9502554B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Nov 22, 2016·12 cites·12 claims
- 0896US9356022B2Semiconductor device with termination structure for power MOSFET applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 31, 2016·11 cites·23 claims
- 0996US8951867B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Feb 10, 2015·22 cites·26 claims
- 1096US8946816B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 3, 2015·20 cites·14 claims
- 1196US8785278B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactYILMAZ HAMZA·Filed 2012·Granted Jul 22, 2014·22 cites·21 claims
- 1296US8575685B2Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply pathBOBDE MADHUR·Filed 2011·Granted Nov 5, 2013·22 cites·19 claims
- 1396US7880223B2Latch-up free vertical TVS diode array structure using trench isolationALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Feb 1, 2011·41 cites·2 claims
- 1496US7554839B2Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatchALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Jun 30, 2009·33 cites·20 claims
- 1595US9748375B2Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contactALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 29, 2017·9 cites·9 claims
- 1695US9281368B1Split-gate trench power MOSFET with protected shield oxideALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Mar 8, 2016·20 cites·10 claims
- 1795US9252264B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 2, 2016·13 cites·12 claims
- 1895US9171949B1Semiconductor device including superjunction structure formed using angled implant processALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Oct 27, 2015·17 cites·14 claims
- 1995US9136380B2Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 15, 2015·18 cites·10 claims
- 2095US8785279B2High voltage field balance metal oxide field effect transistor (FBM)BHALLA ANUP·Filed 2012·Granted Jul 22, 2014·18 cites·18 claims
- 2195US8698196B2Low capacitance transient voltage suppressor (TVS) with reduced clamping voltageGUAN LINGPENG·Filed 2011·Granted Apr 15, 2014·29 cites·10 claims
- 2295US8575695B2Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diodeBOBDE MADHUR·Filed 2009·Granted Nov 5, 2013·36 cites·18 claims
- 2395US8507978B2Split-gate structure in trench-based silicon carbide power deviceBHALLA ANUP·Filed 2011·Granted Aug 13, 2013·23 cites·19 claims
- 2495US8338915B2Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filterMALLIKARARJUNASWAMY SHEKAR·Filed 2010·Granted Dec 25, 2012·30 cites·12 claims
- 2594US9450088B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·8 cites·35 claims
- 2694US9425304B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2014·Granted Aug 23, 2016·14 cites·20 claims
- 2794US9129822B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 8, 2015·12 cites·12 claims
- 2894US8710585B1High voltage fast recovery trench diodeHU JUN·Filed 2013·Granted Apr 29, 2014·16 cites·21 claims
- 2994US8476698B2Corner layout for superjunction deviceGUAN LINGPENG·Filed 2010·Granted Jul 2, 2013·20 cites·6 claims
- 3094US8441046B2Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performancesBOBDE MADHUR·Filed 2010·Granted May 14, 2013·19 cites·14 claims
- 3194US8338854B2TVS with low capacitance and forward voltage drop with depleted SCR as steering diodeBOBDE MADHUR·Filed 2009·Granted Dec 25, 2012·31 cites·22 claims
- 3293US8373208B2Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted Feb 12, 2013·17 cites·14 claims
- 3393US7795987B2Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVSALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Sep 14, 2010·23 cites·24 claims
- 3492US10931276B1Combined IGBT and superjunction MOSFET device with tuned switching speedALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted Feb 23, 2021·6 cites·14 claims
- 3592US9484452B2Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Nov 1, 2016·12 cites·9 claims
- 3692US8896093B2Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filterMALLIKARARJUNASWAMY SHEKAR·Filed 2012·Granted Nov 25, 2014·14 cites·12 claims
- 3792US8461644B2Latch-up free vertical TVS diode array structure using trench isolationBOBDE MADHUR·Filed 2012·Granted Jun 11, 2013·12 cites·4 claims
- 3891US9318587B2Injection control in semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 19, 2016·9 cites·24 claims
- 3991US8975720B2Corner layout for superjunction deviceGUAN LINGPENG·Filed 2013·Granted Mar 10, 2015·11 cites·4 claims
- 4091US8933506B2Diode structures with controlled injection efficiency for fast switchingBOBDE MADHUR·Filed 2011·Granted Jan 13, 2015·15 cites·9 claims
- 4190US9716166B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 4290US9620630B2Injection control in semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Apr 11, 2017·5 cites·30 claims
- 4390US9171917B2Edge termination configurations for high voltage semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Oct 27, 2015·10 cites·8 claims
- 4490US8907414B2High voltage fast recovery trench diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Dec 9, 2014·8 cites·21 claims
- 4590US8710627B2Uni-directional transient voltage suppressor (TVS)GUAN LINGPENG·Filed 2011·Granted Apr 29, 2014·9 cites·28 claims
- 4690US7863995B2Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVSALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted Jan 4, 2011·20 cites·23 claims
- 4789US12295166B2High density shield gate transistor structure and method of makingALPHA & OMEGA SEMICONDUCTOR INT LP·Filed 2022·Granted May 6, 2025·1 cites·9 claims
- 4889US9865678B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jan 9, 2018·4 cites·9 claims
- 4989US9748346B2Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filterALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Aug 29, 2017·8 cites·16 claims
- 5089US9685523B2Diode structures with controlled injection efficiency for fast switchingBOBDE MADHUR·Filed 2014·Granted Jun 20, 2017·6 cites·8 claims
Showing the top 50 of 191 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →