Inventor · disambiguated record
Mayank Bulsara
Also filed as: BULSARA MAYANK · BULSARA MAYANK T
18 granted patents·2 pending applications·218 citations·filing 1998–2019
94Inventor score
Files withAMBERWAVE SYSTEMS CORP10MASSACHUSETTS INST TECHNOLOGY2SUNEDISON SEMICONDUCTOR LTD UEN201334164H2TAIWAN SEMICONDUCTOR MFG2BULSARA MAYANK1
Top patents by PatentIndex Score
20 records- 0192US6232138B1Relaxed InxGa(1-x)as buffersMASSACHUSETTS INST TECHNOLOGY·Filed 1998·Granted May 15, 2001·107 cites·26 claims
- 0286US6594293B1Relaxed InxGa1-xAs layers integrated with SiAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 15, 2003·36 cites·36 claims
- 0383US6891209B2Dynamic random access memory trench capacitorsAMBERWAVE SYSTEMS CORP·Filed 2002·Granted May 10, 2005·19 cites·14 claims
- 0479US9153591B2Strained channel dynamic random access memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 6, 2015·2 cites·20 claims
- 0578US8890226B2Strained channel dynamic random access memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 18, 2014·2 cites·19 claims
- 0671US8253181B2Strained channel dynamic random access memory devicesBULSARA MAYANK·Filed 2008·Granted Aug 28, 2012·3 cites·30 claims
- 0769US6589335B2Relaxed InxGa1-xAs layers integrated with SiAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jul 8, 2003·12 cites·20 claims
- 0868US7494881B2Methods for selective placement of dislocation arraysAMBERWAVE SYSTEMS CORP·Filed 2007·Granted Feb 24, 2009·2 cites·24 claims
- 0965US6849508B2Method of forming multiple gate insulators on a strained semiconductor heterostructureAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Feb 1, 2005·10 cites·24 claims
- 1062US9508724B2Strained channel dynamic random access memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·0 cites·20 claims
- 1162US7172935B2Method of forming multiple gate insulators on a strained semiconductor heterostructureAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Feb 6, 2007·8 cites·11 claims
- 1261US6495868B2Relaxed InxGa1−xAs buffersMASSACHUSETTS INST TECHNOLOGY·Filed 2001·Granted Dec 17, 2002·6 cites·18 claims
- 1359US7594967B2Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxyAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Sep 29, 2009·6 cites·46 claims
- 1458US10796946B2Method of manufacture of a semiconductor on insulator structureSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2019·Granted Oct 6, 2020·0 cites·26 claims
- 1555US7408214B2Dynamic random access memory trench capacitorsAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Aug 5, 2008·3 cites·26 claims
- 1654US10475696B2Method of manufacture of a semiconductor on insulator structureSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Nov 12, 2019·0 cites·30 claims
- 1751US7410861B2Methods of forming dynamic random access memory trench capacitorsAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Aug 12, 2008·2 cites·39 claims
- 1850US8441055B2Methods for forming strained channel dynamic random access memory devicesBULSARA MAYANK T·Filed 2012·Granted May 14, 2013·0 cites·20 claims
- 1942US2004115916A1Selective placement of dislocation arraysAMBERWAVE SYSTEMS CORP·Filed 2003·Application pending·0 cites
- 2036US2002030227A1Strained-silicon diffused metal oxide semiconductor field effect transistorsFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →