Inventor · disambiguated record
Mary Y. Chen
Also filed as: CHEN MARY · CHEN MARY Y
18 granted patents·1 pending application·397 citations·filing 1995–2015
94Inventor score
Top patents by PatentIndex Score
19 records- 0196US9812532B1III-nitride P-channel transistorHRL LAB LLC·Filed 2015·Granted Nov 7, 2017·17 cites·24 claims
- 0296US9337332B2III-Nitride insulating-gate transistors with passivationHRL LAB LLC·Filed 2014·Granted May 10, 2016·36 cites·30 claims
- 0391US5528209AMonolithic microwave integrated circuit and methodHUGHES AIRCRAFT CO·Filed 1995·Granted Jun 18, 1996·134 cites·13 claims
- 0490US8653559B2AlGaN/GaN hybrid MOS-HFETCORRION ANDREA·Filed 2011·Granted Feb 18, 2014·19 cites·24 claims
- 0590US6281666B1Efficiency of a multiphase switching power supply during low power modeADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 28, 2001·118 cites·27 claims
- 0688US7576409B1Group III-V compound semiconductor based heterojuncton bipolar transistors with various collector profiles on a common waferHRL LAB LLC·Filed 2005·Granted Aug 18, 2009·13 cites·18 claims
- 0785US7470619B1Interconnect with high aspect ratio plugged viasHRL LAB LLC·Filed 2006·Granted Dec 30, 2008·16 cites·30 claims
- 0870US7892881B2Fabricating a device with a diamond layerRAYTHEON CO·Filed 2009·Granted Feb 22, 2011·4 cites·30 claims
- 0970US7655529B1InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common waferHRL LAB LLC·Filed 2005·Granted Feb 2, 2010·3 cites·12 claims
- 1069US9117763B1Quantum dots (QD) for semiconductor integrated circuitHRL LAB LLC·Filed 2013·Granted Aug 25, 2015·2 cites·10 claims
- 1169US8697532B2InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common waferCHEN MARY·Filed 2009·Granted Apr 15, 2014·3 cites·20 claims
- 1269US8216910B2Group III-V compound semiconductor based heterojunction bipolar transistors with various collector profiles on a common waferCHEN MARY·Filed 2009·Granted Jul 10, 2012·3 cites·20 claims
- 1368US8595654B1Semiconductor device coding using quantum dot technologyCHEN MARY Y·Filed 2006·Granted Nov 26, 2013·5 cites·17 claims
- 1463US7531851B1Electronic device with reduced interface charge between epitaxially grown layers and a method for making the sameHRL LAB LLC·Filed 2007·Granted May 12, 2009·6 cites·10 claims
- 1557US6721893B1System for suspending operation of a switching regulator circuit in a power supply if the temperature of the switching regulator is too highADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 13, 2004·15 cites·34 claims
- 1654US9646839B2Ta based ohmic contactHRL LAB LLC·Filed 2014·Granted May 9, 2017·0 cites·31 claims
- 1751US7259444B1Optoelectronic device with patterned ion implant subcollectorHRL LAB LLC·Filed 2004·Granted Aug 21, 2007·3 cites·45 claims
- 1838US7582536B1Electronic device with reduced interface charge between epitaxially grown layers and a method for making the sameHRL LAB LLC·Filed 2008·Granted Sep 1, 2009·0 cites·14 claims
- 1934US2005035370A1Semiconductor structure for a heterojunction bipolar transistor and a method of making sameHRL LAB LLC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →