Inventor · disambiguated record
Mary H. Crawford
Also filed as: CRAWFORD MARY · CRAWFORD MARY H
11 granted patents·351 citations·filing 1995–2022
90Inventor score
Files withSANDIA CORP6CRAWFORD MARY2NAT TECH & ENG SOLUTIONS SANDIA LLC1STC UNM1UNM RAINFOREST INNOVATIONS1
Top patents by PatentIndex Score
11 records- 0195US5557627AVisible-wavelength semiconductor lasers and arraysSANDIA CORP·Filed 1995·Granted Sep 17, 1996·152 cites·54 claims
- 0294US6393038B1Frequency-doubled vertical-external-cavity surface-emitting laserSANDIA CORP·Filed 1999·Granted May 21, 2002·132 cites·38 claims
- 0393US8451877B1High efficiency III-nitride light-emitting diodesCRAWFORD MARY·Filed 2011·Granted May 28, 2013·26 cites·13 claims
- 0490US7915626B1Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial filmsSANDIA CORP·Filed 2006·Granted Mar 29, 2011·17 cites·10 claims
- 0584US9059356B1Laterally injected light-emitting diode and laser diodeSANDIA CORP·Filed 2014·Granted Jun 16, 2015·7 cites·25 claims
- 0675US8349633B1Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial filmsSANDIA CORP·Filed 2009·Granted Jan 8, 2013·4 cites·19 claims
- 0766US11715635B2Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etchingUNM RAINFOREST INNOVATIONS·Filed 2021·Granted Aug 1, 2023·0 cites·22 claims
- 0862US6665329B1Broadband visible light source based on AllnGaN light emitting diodesSANDIA CORP·Filed 2002·Granted Dec 16, 2003·13 cites·19 claims
- 0959US11177126B2Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etchingSTC UNM·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 1054US12218255B2High voltage gallium nitride vertical PN diodeNAT TECH & ENG SOLUTIONS SANDIA LLC·Filed 2022·Granted Feb 4, 2025·0 cites·10 claims
- 1150US11957710B2Wound-care composition and method of useCRAWFORD MARY·Filed 2022·Granted Apr 16, 2024·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →