Inventor · disambiguated record
Mark L. Doczy
Also filed as: DOCZY MARK · DOCZY MARK L
206 granted patents·56 pending applications·6,034 citations·filing 2001–2021
99Inventor score
Top patents by PatentIndex Score
262 records- 0199US7531437B2Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric materialINTEL CORP·Filed 2006·Granted May 12, 2009·195 cites·10 claims
- 0299US7518196B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2005·Granted Apr 14, 2009·72 cites·22 claims
- 0399US7105390B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2003·Granted Sep 12, 2006·416 cites·36 claims
- 0498US7898041B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2007·Granted Mar 1, 2011·113 cites·20 claims
- 0598US7893506B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2010·Granted Feb 22, 2011·35 cites·10 claims
- 0698US7569443B2Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gateINTEL CORP·Filed 2005·Granted Aug 4, 2009·72 cites·9 claims
- 0798US7485503B2Dielectric interface for group III-V semiconductor deviceINTEL CORP·Filed 2005·Granted Feb 3, 2009·63 cites·13 claims
- 0898US7479421B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyINTEL CORP·Filed 2005·Granted Jan 20, 2009·105 cites·2 claims
- 0998US7326656B2Method of forming a metal oxide dielectricINTEL CORP·Filed 2006·Granted Feb 5, 2008·456 cites·19 claims
- 1098US7279375B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2005·Granted Oct 9, 2007·93 cites·12 claims
- 1198US6696345B2Metal-gate electrode for CMOS transistor applicationsINTEL CORP·Filed 2002·Granted Feb 24, 2004·164 cites·13 claims
- 1297US7355281B2Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2006·Granted Apr 8, 2008·47 cites·12 claims
- 1397US7316949B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2005·Granted Jan 8, 2008·50 cites·13 claims
- 1497US7226831B1Device with scavenging spacer layerINTEL CORP·Filed 2005·Granted Jun 5, 2007·60 cites·8 claims
- 1597US7208361B2Replacement gate process for making a semiconductor device that includes a metal gate electrodeINTEL CORP·Filed 2004·Granted Apr 24, 2007·128 cites·20 claims
- 1697US7126199B2Multilayer metal gate electrodeINTEL CORP·Filed 2004·Granted Oct 24, 2006·154 cites·5 claims
- 1797US6617209B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2002·Granted Sep 9, 2003·132 cites·19 claims
- 1896US8129795B2Inducing strain in the channels of metal gate transistorsDATTA SUMAN·Filed 2011·Granted Mar 6, 2012·29 cites·5 claims
- 1996US7879675B2Field effect transistor with metal source/drain regionsINTEL CORP·Filed 2008·Granted Feb 1, 2011·36 cites·8 claims
- 2096US7429747B2Sb-based CMOS devicesINTEL CORP·Filed 2006·Granted Sep 30, 2008·39 cites·26 claims
- 2196US7425500B2Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistorsINTEL CORP·Filed 2006·Granted Sep 16, 2008·45 cites·16 claims
- 2296US7361958B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2004·Granted Apr 22, 2008·86 cites·13 claims
- 2396US7355254B2Pinning layer for low resistivity N-type source drain ohmic contactsINTEL CORP·Filed 2006·Granted Apr 8, 2008·50 cites·18 claims
- 2496US7329913B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2004·Granted Feb 12, 2008·114 cites·18 claims
- 2596US7317231B2Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrodeINTEL CORP·Filed 2005·Granted Jan 8, 2008·35 cites·20 claims
- 2696US7153784B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 26, 2006·86 cites·48 claims
- 2796US7148548B2Semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 12, 2006·117 cites·27 claims
- 2896US6858483B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2002·Granted Feb 22, 2005·81 cites·8 claims
- 2995US8796797B2Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form sameDOYLE BRIAN S·Filed 2012·Granted Aug 5, 2014·17 cites·30 claims
- 3095US8193567B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyKAVALIEROS JACK T·Filed 2008·Granted Jun 5, 2012·33 cites·4 claims
- 3195US7785958B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2008·Granted Aug 31, 2010·38 cites·3 claims
- 3295US7666727B2Semiconductor device having a laterally modulated gate workfunction and method of fabricationINTEL CORP·Filed 2005·Granted Feb 23, 2010·39 cites·13 claims
- 3395US7528025B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2007·Granted May 5, 2009·52 cites·7 claims
- 3495US7157378B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jan 2, 2007·107 cites·20 claims
- 3595US7030430B2Transition metal alloys for use as a gate electrode and devices incorporating these alloysINTEL CORP·Filed 2003·Granted Apr 18, 2006·81 cites·8 claims
- 3695US6696327B1Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2003·Granted Feb 24, 2004·85 cites·2 claims
- 3794US8836056B2Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layerOGUZ KAAN·Filed 2012·Granted Sep 16, 2014·18 cites·15 claims
- 3894US8183646B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationCHAU ROBERT S·Filed 2011·Granted May 22, 2012·12 cites·18 claims
- 3994US7989280B2Dielectric interface for group III-V semiconductor deviceINTEL CORP·Filed 2008·Granted Aug 2, 2011·20 cites·11 claims
- 4094US7381608B2Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jun 3, 2008·85 cites·20 claims
- 4194US7220635B2Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layerINTEL CORP·Filed 2003·Granted May 22, 2007·78 cites·20 claims
- 4294US7217611B2Methods for integrating replacement metal gate structuresINTEL CORP·Filed 2003·Granted May 15, 2007·70 cites·17 claims
- 4394US7074680B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2004·Granted Jul 11, 2006·64 cites·20 claims
- 4494US6972225B2integrating n-type and P-type metal gate transistorsINTEL CORP·Filed 2004·Granted Dec 6, 2005·54 cites·19 claims
- 4594US6953719B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2004·Granted Oct 11, 2005·62 cites·9 claims
- 4694US6620713B2Interfacial layer for gate electrode and high-k dielectric layer and methods of fabricationINTEL CORP·Filed 2002·Granted Sep 16, 2003·80 cites·6 claims
- 4793US8368135B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2012·Granted Feb 5, 2013·8 cites·18 claims
- 4893US7825481B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2008·Granted Nov 2, 2010·12 cites·12 claims
- 4993US7390709B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jun 24, 2008·71 cites·15 claims
- 5093US7153734B2CMOS device with metal and silicide gate electrodes and a method for making itINTEL CORP·Filed 2003·Granted Dec 26, 2006·64 cites·4 claims
Showing the top 50 of 262 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →