Inventor · disambiguated record
Martin Domeij
Also filed as: DOMEIJ MARTIN
12 granted patents·5 pending applications·40 citations·filing 2008–2024
87Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC8FAIRCHILD SEMICONDUCTOR6DOMEIJ MARTIN2SEMICONDUCTOR COMPONENTS IND1
Top patents by PatentIndex Score
17 records- 0194US10504995B1Short-circuit performance for silicon carbide semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Dec 10, 2019·13 cites·16 claims
- 0291US10749002B2Short-circuit performance for silicon carbide semiconductor deviceSEMICONDUCTOR COMPONENTS IND·Filed 2019·Granted Aug 18, 2020·6 cites·20 claims
- 0383US8829533B2Silicon carbide semiconductor deviceDOMEIJ MARTIN·Filed 2008·Granted Sep 9, 2014·15 cites·21 claims
- 0476US8378390B2Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on top of a dielectric layer formed at a region between emitter contact and base contactFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Feb 19, 2013·3 cites·21 claims
- 0567US8907351B2Bipolar junction transistor in silicon carbide with improved breakdown voltageFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Dec 9, 2014·2 cites·20 claims
- 0666US9685550B2Silicon carbide (SiC) device with improved gate dielectric shieldingFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Jun 20, 2017·1 cites·20 claims
- 0759US12446272B2Semiconductor devices and methods of manufacturing semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Oct 14, 2025·0 cites·17 claims
- 0855US2025338632A1Switching device with passive overcurrent protectionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 0954US2025324769A1Electronic device and a circuit including a power transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1053US10453950B2Silicon carbide (SiC) device with improved gate dielectric shieldingFAIRCHILD SEMICONDUCTOR·Filed 2017·Granted Oct 22, 2019·0 cites·20 claims
- 1153US8853827B2Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contactFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Oct 7, 2014·0 cites·13 claims
- 1250US2023378273A1Silicon carbide trench power deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 1347US11817478B2Termination structures with reduced dynamic output capacitance lossSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Nov 14, 2023·0 cites·20 claims
- 1443US2023282693A1Trench channel semiconductor devices and related methodsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Application pending·0 cites
- 1541US9590047B2SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layerDOMEIJ MARTIN·Filed 2012·Granted Mar 7, 2017·0 cites·23 claims
- 1637US2021050420A1Silicon carbide trench power deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Application pending·0 cites
- 1735US9478629B2Conductivity modulation in a silicon carbide bipolar junction transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Oct 25, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →