Inventor · disambiguated record
Massimo V. Fischetti
Also filed as: FISCHETTI MASSIMO V
7 granted patents·1 pending application·51 citations·filing 2002–2016
80Inventor score
Top patents by PatentIndex Score
8 records- 0186US6864520B2Germanium field effect transistor and method of fabricating the sameIBM·Filed 2002·Granted Mar 8, 2005·46 cites·20 claims
- 0263US7968946B2Higher performance CMOS on (110) wafersIBM·Filed 2008·Granted Jun 28, 2011·2 cites·13 claims
- 0361US7314790B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2006·Granted Jan 1, 2008·1 cites·15 claims
- 0454US7943486B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2008·Granted May 17, 2011·0 cites·11 claims
- 0553US7462525B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2007·Granted Dec 9, 2008·0 cites·10 claims
- 0649US7161169B2Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strainIBM·Filed 2004·Granted Jan 9, 2007·2 cites·7 claims
- 0744US2007158739A1Higher performance CMOS on (110) wafersIBM·Filed 2006·Application pending·0 cites
- 0835US9741416B1Memory devices based on gate controlled ferromagnestism and spin-polarized current injectionUNIV TEXAS·Filed 2016·Granted Aug 22, 2017·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →