Inventor · disambiguated record
Mark C. Foisy
Also filed as: FOISY MARK C
3 granted patents·2 pending applications·24 citations·filing 2004–2007
66Inventor score
Top patents by PatentIndex Score
5 records- 0181US7687337B2Transistor with differently doped strained current electrode regionFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 30, 2010·13 cites·23 claims
- 0260US7442621B2Semiconductor process for forming stress absorbent shallow trench isolation structuresFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 28, 2008·10 cites·15 claims
- 0344US2006194384A1Semiconductor device with multiple semiconductor layersFREESCALE SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 0439US7344933B2Method of forming device having a raised extension regionFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 18, 2008·1 cites·20 claims
- 0537US2005275018A1Semiconductor device with multiple semiconductor layersVENKATESAN SURESH·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →