Inventor · disambiguated record
Mario Foroni
Also filed as: FORONI MARIO
9 granted patents·119 citations·filing 1979–2001
89Inventor score
Files withATES COMPONENTI ELETTRON4SGS THOMSON MICROELECTRONICS3SGS MICROELETTRONICA SPA1ST MICROELECTRONICS SRL1
Top patents by PatentIndex Score
9 records- 0175US6232140B1Semiconductor integrated capacitive acceleration sensor and relative fabrication methodSGS THOMSON MICROELECTRONICS·Filed 1999·Granted May 15, 2001·30 cites·24 claims
- 0270US6387725B1Production method for integrated angular speed sensor deviceST MICROELECTRONICS SRL·Filed 2001·Granted May 14, 2002·15 cites·10 claims
- 0369US4266233AI-C Wafer incorporating junction-type field-effect transistorATES COMPONENTI ELETTRON·Filed 1979·Granted May 5, 1981·16 cites·5 claims
- 0465US6104073ASemiconductor integrated capacitive acceleration sensor and relative fabrication methodSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Aug 15, 2000·20 cites·29 claims
- 0559US4631561ASemiconductor overvoltage suppressor with accurately determined striking potentialATES COMPONENTI ELETTRON·Filed 1984·Granted Dec 23, 1986·15 cites·1 claims
- 0639US4725810AMethod of making an implanted resistor, and resistor obtained therebySGS MICROELETTRONICA SPA·Filed 1986·Granted Feb 16, 1988·9 cites·7 claims
- 0736US4614962AControlled electronic switching device for the suppression of transientsATES COMPONENTI ELETTRON·Filed 1984·Granted Sep 30, 1986·6 cites·2 claims
- 0830US4319262AIntegrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrodeATES COMPONENTI ELETTRON·Filed 1980·Granted Mar 9, 1982·6 cites·6 claims
- 0929US4910159AMethod for incrementally increasing the collector area of a lateral PNP transistor during electrical testing of an integrated device on waferSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Mar 20, 1990·2 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →