Inventor · disambiguated record
Marc C. French
Also filed as: FRENCH MARC C
10 granted patents·2 pending applications·60 citations·filing 2012–2020
86Inventor score
Top patents by PatentIndex Score
12 records- 0197US8748940B1Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2012·Granted Jun 10, 2014·35 cites·20 claims
- 0291US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 0390US10847656B2Fabrication of non-planar IGZO devices for improved electrostaticsINTEL CORP·Filed 2015·Granted Nov 24, 2020·6 cites·18 claims
- 0480US10249742B2Offstate parasitic leakage reduction for tunneling field effect transistorsINTEL CORP·Filed 2015·Granted Apr 2, 2019·3 cites·22 claims
- 0579US9159787B2Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2014·Granted Oct 13, 2015·2 cites·13 claims
- 0675US9691848B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2016·Granted Jun 27, 2017·1 cites·20 claims
- 0767US11626519B2Fabrication of non-planar IGZO devices for improved electrostaticsINTEL CORP·Filed 2020·Granted Apr 11, 2023·0 cites·11 claims
- 0861US10008565B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2017·Granted Jun 26, 2018·0 cites·10 claims
- 0958US9490329B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2015·Granted Nov 8, 2016·0 cites·8 claims
- 1046US2017317187A1Uniform Layers Formed with Aspect Ratio Trench Based ProcessesINTEL CORP·Filed 2014·Application pending·0 cites
- 1141US11450527B2Engineering tensile strain buffer in art for high quality Ge channelINTEL CORP·Filed 2016·Granted Sep 20, 2022·0 cites·15 claims
- 1236US2019058043A1Transistor gate-channel arrangementsINTEL CORP·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Marc C. French files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →