Inventor · disambiguated record
Masato Fujinaga
Also filed as: FUJINAGA MASATO
14 granted patents·279 citations·filing 1988–2006
93Inventor score
Top patents by PatentIndex Score
14 records- 0180US6396113B1Active trench isolation structure to prevent punch-through and junction leakageMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 28, 2002·28 cites·15 claims
- 0276US5070469ATopography simulation methodMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 3, 1991·48 cites·2 claims
- 0374US6355387B1Method of making a mask patternMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 12, 2002·38 cites·19 claims
- 0473US5502643AMethod of and an apparatus for setting up parameters which are used to manufacture a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 26, 1996·35 cites·22 claims
- 0572US5067101ATopography simulation methodMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 19, 1991·40 cites·2 claims
- 0657US5307296ASemiconductor workpiece topography prediction methodMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 26, 1994·34 cites·1 claims
- 0749US4905068ASemiconductor device having interconnection layers of T-shape cross sectionMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 27, 1990·16 cites·13 claims
- 0847US7365433B2High-frequency semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Apr 29, 2008·0 cites·1 claims
- 0944US6670711B2Semiconductor device including low dielectric constant insulating film formed on upper and side surfaces of the gate electrodeRENESAS TECH CORP·Filed 2002·Granted Dec 30, 2003·1 cites·2 claims
- 1040US5845105AMethod of simulating semiconductor manufacture with process functions according to user applicationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 1, 1998·12 cites·22 claims
- 1139US5812435AShape simulation method allowing simulation of processed shape during steps of manufacturing a semiconductor device in a short period of timeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 22, 1998·13 cites·33 claims
- 1239US5293557AMethod of describing a surface of an object after processingMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 8, 1994·12 cites·6 claims
- 1338US7095118B2High-Frequency semiconductor device with noise elimination characteristicRENESAS TECH CORP·Filed 2001·Granted Aug 22, 2006·0 cites·1 claims
- 1430US5416339ASemiconductor device having electrode for collecting electric charge in channel regionMITSUBISHI ELECTRIC CORP·Filed 1990·Granted May 16, 1995·2 cites·21 claims
Join the waitlist — get patent alerts
Get an alert when Masato Fujinaga files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →