Inventor · disambiguated record
Mark B. Fuselier
Also filed as: FUSELIER MARK · FUSELIER MARK B · FUSELIER MARK BRANDON
19 granted patents·1 pending application·292 citations·filing 2000–2006
95Inventor score
Files withADVANCED MICRO DEVICES INC20
Top patents by PatentIndex Score
20 records- 0191US6794256B1Method for asymmetric spacer formationADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 21, 2004·62 cites·29 claims
- 0284US6463570B1Apparatus and method for verifying process integrityADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 8, 2002·32 cites·21 claims
- 0383US6737332B1Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making sameADVANCED MICRO DEVICES INC·Filed 2002·Granted May 18, 2004·30 cites·6 claims
- 0481US6806111B1Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 19, 2004·33 cites·17 claims
- 0577US6884702B2Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrateADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 26, 2005·16 cites·23 claims
- 0676US6876037B2Fully-depleted SOI deviceADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 5, 2005·18 cites·36 claims
- 0776US6583016B1Doped spacer liner for improved transistor performanceADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 24, 2003·20 cites·10 claims
- 0876US6426262B1Method of analyzing the effects of shadowing of angled halo implantsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 30, 2002·18 cites·24 claims
- 0973US6780686B2Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regionsADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 24, 2004·15 cites·35 claims
- 1071US7129142B2Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 31, 2006·11 cites·73 claims
- 1171US6919236B2Biased, triple-well fully depleted SOI structure, and various methods of making and operating sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 19, 2005·14 cites·44 claims
- 1264US7544999B2SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrateADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 9, 2009·1 cites·13 claims
- 1363US7180136B2Biased, triple-well fully depleted SOI structureADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 20, 2007·2 cites·40 claims
- 1461US6570228B1Method and apparatus for electrically measuring insulating film thicknessADVANCED MICRO DEVICES INC·Filed 2002·Granted May 27, 2003·9 cites·68 claims
- 1554US6287877B1Electrically quantifying transistor spacer widthADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 11, 2001·7 cites·19 claims
- 1653US7335568B2Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Feb 26, 2008·0 cites·37 claims
- 1753US7176095B1Bi-modal halo implantationADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 13, 2007·4 cites·12 claims
- 1841US2004219761A1Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making sameADVANCED MICRO DEVICES INC·Filed 2004·Application pending·0 cites
- 1935US7432136B2Transistors with controllable threshold voltages, and various methods of making and operating sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 7, 2008·0 cites·31 claims
- 2028US6410350B1Detecting die speed variationsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·0 cites·32 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →