Inventor · disambiguated record
Mark C. Gilmer
Also filed as: GILMER MARK C
82 granted patents·2,075 citations·filing 1996–2000
99Inventor score
Top patents by PatentIndex Score
82 records- 0192US5907780AIncorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted May 25, 1999·96 cites·15 claims
- 0291US6373113B1Nitrogenated gate structure for improved transistor performance and method for making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 16, 2002·81 cites·9 claims
- 0391US6169306B1Semiconductor devices comprised of one or more epitaxial layersADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 2, 2001·92 cites·44 claims
- 0490US6048766AFlash memory device having high permittivity stacked dielectric and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 11, 2000·91 cites·19 claims
- 0588US6043157ASemiconductor device having dual gate electrode material and process of fabrication thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 28, 2000·70 cites·22 claims
- 0685US5937308ASemiconductor trench isolation structure formed substantially within a single chamberADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·78 cites·7 claims
- 0785US5888870AMemory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 30, 1999·60 cites·10 claims
- 0883US6148832AMethod and apparatus for in-situ cleaning of polysilicon-coated quartz furnacesADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·43 cites·10 claims
- 0983US5840610AEnhanced oxynitride gate dielectrics using NF3 gasADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 24, 1998·71 cites·21 claims
- 1082US6265749B1Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constantADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 24, 2001·48 cites·4 claims
- 1182US6096659AManufacturing process for reducing feature dimensions in a semiconductorADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·63 cites·20 claims
- 1282US6057584ASemiconductor device having a tri-layer gate insulating dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted May 2, 2000·49 cites·22 claims
- 1381US6124620AIncorporating barrier atoms into a gate dielectric using gas cluster ion beam implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 26, 2000·56 cites·17 claims
- 1481US6051865ATransistor having a barrier layer below a high permittivity gate dielectricADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 18, 2000·57 cites·15 claims
- 1580US6165314AApparatus for performing jet vapor reduction of the thickness of process layersADVANCED MICRON DEVICES INC·Filed 2000·Granted Dec 26, 2000·20 cites·65 claims
- 1680US6110784AMethod of integration of nitrogen bearing high K filmADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 29, 2000·54 cites·23 claims
- 1777US6121094AMethod of making a semiconductor device with a multi-level gate structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 19, 2000·33 cites·21 claims
- 1877US6051487ASemiconductor device fabrication using a sacrificial plug for defining a region for a gate electrodeADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 18, 2000·40 cites·21 claims
- 1975US6140167AHigh performance MOSFET and method of forming the same using silicidation and junction implantation prior to gate formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·35 cites·19 claims
- 2072US6002150ACompound material T gate structure for devices with gate dielectrics having a high dielectric constantADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 14, 1999·38 cites·14 claims
- 2171US5940698AMethod of making a semiconductor device having high performance gate electrode structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 17, 1999·29 cites·21 claims
- 2271US5858848ASemiconductor fabrication employing self-aligned sidewall spacers laterally adjacent to a transistor gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 12, 1999·25 cites·9 claims
- 2371US5851307AMethod for in-situ cleaning of polysilicon-coated quartz furnacesADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·23 cites·8 claims
- 2470US6100204AMethod of making ultra thin gate oxide using aluminum oxideADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·28 cites·18 claims
- 2570US5990493ADiamond etch stop rendered conductive by a gas cluster ion beam implant of titaniumADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 23, 1999·35 cites·7 claims
- 2669US6197668B1Ferroelectric-enhanced tantalum pentoxide for dielectric material applications in CMOS devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 6, 2001·34 cites·12 claims
- 2769US5963810ASemiconductor device having nitrogen enhanced high permittivity gate insulating layer and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 5, 1999·29 cites·20 claims
- 2867US6005274ASemiconductor device with a multi-level gate structure and a gate dielectric composed of barium zirconium titanate materialADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 21, 1999·21 cites·29 claims
- 2967US5821172AOxynitride GTE dielectrics using NH3 gasADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 13, 1998·26 cites·13 claims
- 3066US5989967ATransistor with ultra short length defined partially by sidewall oxidation of a gate conductor overlying the channel lengthADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 23, 1999·24 cites·26 claims
- 3165US6174794B1Method of making high performance MOSFET with polished gate and source/drain featureADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 16, 2001·23 cites·21 claims
- 3264US6204130B1Semiconductor device having reduced polysilicon gate electrode width and method of manufacture thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 20, 2001·22 cites·14 claims
- 3364US6057209ASemiconductor device having a nitrogen bearing isolation regionADVANCED MICRO DEVICES INC·Filed 1997·Granted May 2, 2000·28 cites·31 claims
- 3464US5849643AGate oxidation technique for deep sub quarter micron transistorsADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 15, 1998·23 cites·18 claims
- 3563US6040207AOxide formation technique using thin film silicon depositionADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 21, 2000·18 cites·11 claims
- 3663US5877057AMethod of forming ultra-thin oxides with low temperature oxidationADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 2, 1999·19 cites·19 claims
- 3762US5783469AMethod for making nitrogenated gate structure for improved transistor performanceADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 21, 1998·18 cites·13 claims
- 3861US6175144B1Advanced isolation structure for high density semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 16, 2001·25 cites·19 claims
- 3961US5930632AProcess of fabricating a semiconductor device having cobalt niobate gate electrode structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·16 cites·13 claims
- 4060US6099387ACMP of a circlet wafer using disc-like brake polish padsADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·21 cites·35 claims
- 4158US5976952AImplanted isolation structure formation for high density CMOS integrated circuitsADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 2, 1999·23 cites·24 claims
- 4258US5872376AOxide formation technique using thin film silicon depositionADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 16, 1999·14 cites·5 claims
- 4357US6114228AMethod of making a semiconductor device with a composite gate dielectric layer and gate barrier layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 5, 2000·14 cites·12 claims
- 4456US6197647B1Method of forming ultra-thin oxides with low temperature oxidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 6, 2001·13 cites·24 claims
- 4556US6163060ASemiconductor device with a composite gate dielectric layer and gate barrier layer and method of making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 19, 2000·13 cites·9 claims
- 4655US6172407B1Source/drain and lightly doped drain formation at post interlevel dielectric isolation with high-K gate electrode designADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 9, 2001·14 cites·14 claims
- 4755US6172402B1Integrated circuit having transistors that include insulative punchthrough regions and method of formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 9, 2001·20 cites·16 claims
- 4855US6106618APhotoresist application for a circlet waferADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 22, 2000·18 cites·42 claims
- 4953US6153477AUltra short transistor channel length formed using a gate dielectric having a relatively high dielectric constantADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 28, 2000·18 cites·22 claims
- 5053US6066519ASemiconductor device having an outgassed oxide layer and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted May 23, 2000·16 cites·19 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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