Inventor · disambiguated record
Matthias Georg Gottwald
Also filed as: GOTTWALD MATTHIAS · GOTTWALD MATTHIAS G · GOTTWALD MATTHIAS GEORG
27 granted patents·10 pending applications·118 citations·filing 2014–2024
94Inventor score
Top patents by PatentIndex Score
37 records- 0198US9634237B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2014·Granted Apr 25, 2017·46 cites·5 claims
- 0297US10692927B1Double MTJ stack with synthetic anti-ferromagnetic free layer and AlN bottom barrier layerIBM·Filed 2019·Granted Jun 23, 2020·14 cites·20 claims
- 0395US12364164B2Reactive serial resistance reduction for magnetoresistive random-access memory devicesIBM·Filed 2022·Granted Jul 15, 2025·1 cites·20 claims
- 0494US9590010B1Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layerQUALCOMM INC·Filed 2016·Granted Mar 7, 2017·18 cites·29 claims
- 0593US9620706B2Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction deviceQUALCOMM INC·Filed 2014·Granted Apr 11, 2017·10 cites·30 claims
- 0690US11569438B2Magnetoresistive random-access memory deviceIBM·Filed 2020·Granted Jan 31, 2023·2 cites·16 claims
- 0786US10134808B2Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)QUALCOMM INC·Filed 2016·Granted Nov 20, 2018·8 cites·27 claims
- 0883US9728718B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 0982US11302372B2MTJ stack containing a top magnetic pinned layer having strong perpendicular magnetic anisotropyIBM·Filed 2020·Granted Apr 12, 2022·2 cites·14 claims
- 1082US10937828B2Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profileIBM·Filed 2018·Granted Mar 2, 2021·2 cites·6 claims
- 1179US10103319B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2017·Granted Oct 16, 2018·1 cites·16 claims
- 1279US9548446B2Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)QUALCOMM INC·Filed 2016·Granted Jan 17, 2017·4 cites·6 claims
- 1376US10804319B2Top pinned MTJ stack with synthetic anti-ferromagnetic free layer and AlN seed layerIBM·Filed 2019·Granted Oct 13, 2020·1 cites·20 claims
- 1476US9570509B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2015·Granted Feb 14, 2017·2 cites·30 claims
- 1575US9444035B2Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabricationQUALCOMM INC·Filed 2014·Granted Sep 13, 2016·2 cites·24 claims
- 1669US12464957B2Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devicesIBM·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 1767US12108686B2Paramagnetic hexagonal metal phase coupling spacerIBM·Filed 2021·Granted Oct 1, 2024·0 cites·27 claims
- 1864US2025040444A1Free layer in magnetoresistive random-access memoryIBM·Filed 2023·Application pending·0 cites
- 1963US9385309B2Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materialsQUALCOMM INC·Filed 2014·Granted Jul 5, 2016·1 cites·12 claims
- 2057US11309479B2Computing devices containing magnetic Josephson Junctions with embedded magnetic field control elementIBM·Filed 2019·Granted Apr 19, 2022·0 cites·10 claims
- 2155US2025338780A1Free layer in magnetic tunnel junction of a mram deviceIBM·Filed 2024·Application pending·0 cites
- 2254USD1082613SMotor vehicle, toy replica, and/or other replicaMERCEDES BENZ GROUP AG·Filed 2024·Granted Jul 8, 2025·1 cites·1 claims
- 2354US11487508B2Magnetic tunnel junction based true random number generatorIBM·Filed 2019·Granted Nov 1, 2022·0 cites·20 claims
- 2454US9595666B2Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materialsQUALCOMM INC·Filed 2016·Granted Mar 14, 2017·0 cites·14 claims
- 2554US2024334837A1Magnetic tunnel junction free layer of multiple materialsIBM·Filed 2023·Application pending·0 cites
- 2653US9583696B2Reference layer for perpendicular magnetic anisotropy magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Feb 28, 2017·0 cites·28 claims
- 2753US2024164219A1Fast switching mram having an aluminum-manganese-germanium free layer combined with a chromium diffusion barrierIBM·Filed 2022·Application pending·0 cites
- 2852US2025107453A1Ordered alloy magnetic tunnel junction deviceIBM·Filed 2023·Application pending·0 cites
- 2949US11251360B2MTJ capping layer structure for improved write error rate slopes and thermal stabilityIBM·Filed 2020·Granted Feb 15, 2022·0 cites·18 claims
- 3047US10079337B2Double magnetic tunnel junction with dynamic reference layerIBM·Filed 2017·Granted Sep 18, 2018·0 cites·16 claims
- 3147US9324939B2Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)QUALCOMM INC·Filed 2014·Granted Apr 26, 2016·0 cites·24 claims
- 3244US2020066969A1Perpendicular mram free layer with nb oxide containing capping layerIBM·Filed 2018·Application pending·0 cites
- 3342US10340446B1Semiconductor structure multilayers having a dusting material at an interface between a non-magnetic layer and a magnetic layerIBM·Filed 2018·Granted Jul 2, 2019·0 cites·20 claims
- 3441US2021273155A1Mtj stack with self-ordering top magnetic free layer with tetragonal crystalline symmetryIBM·Filed 2020·Application pending·0 cites
- 3537US2020106003A1Optimized perpendicular magnetic free layer stack with a crystalline grain growth controlling layerIBM·Filed 2018·Application pending·0 cites
- 3636US2017077387A1Magnetic tunnel junction (mtj) devices particularly suited for efficient spin-torque-transfer (stt) magnetic random access memory (mram) (stt mram)QUALCOMM INC·Filed 2015·Application pending·0 cites
- 3731US2017059669A1Magnetic field enhancing backing plate for mram wafer testingQUALCOMM INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →