Inventor · disambiguated record
Maik Haeberlen
Also filed as: HAEBERLEN MAIK
4 granted patents·2 pending applications·11 citations·filing 2006–2025
68Inventor score
Top patents by PatentIndex Score
6 records- 0182US10283356B2Semiconductor wafer comprising a monocrystalline group-IIIA nitride layerSILTRONIC AG·Filed 2016·Granted May 7, 2019·5 cites·22 claims
- 0267US8383495B2Semiconductor layer structure and method for fabricating a semiconductor layer structureSILTRONIC AG·Filed 2011·Granted Feb 26, 2013·2 cites·12 claims
- 0365US8492243B2Method for the production of a semiconductor structureHAEBERLEN MAIK·Filed 2009·Granted Jul 23, 2013·4 cites·15 claims
- 0457US2025253124A1Disturbance compensation for charged particle beam devicesCARL ZEISS MULTISEM GMBH·Filed 2025·Application pending·0 cites
- 0538US2006267024A1Semiconductor layer structure and process for producing a semiconductor layer structureSILTRONIC AG·Filed 2006·Application pending·0 cites
- 0636US9828692B2Apparatus and process for producing a single crystal of siliconSILTRONIC AG·Filed 2015·Granted Nov 28, 2017·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →