Inventor · disambiguated record
Masana Harada
Also filed as: HARADA MASANA
25 granted patents·927 citations·filing 1988–2004
97Inventor score
Files withMITSUBISHI ELECTRIC CORP25
Top patents by PatentIndex Score
25 records- 0197US6501146B1Semiconductor device and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 31, 2002·171 cites·5 claims
- 0288US7253031B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Aug 7, 2007·37 cites·4 claims
- 0388US6979874B2Semiconductor device and method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 27, 2005·42 cites·8 claims
- 0486US5525821APN junction trench isolation type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 11, 1996·69 cites·18 claims
- 0585US6331466B1Insulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 18, 2001·37 cites·6 claims
- 0684US5298780ASemiconductor device and method of fabricating sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 29, 1994·91 cites·21 claims
- 0782US6323508B1Insulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 27, 2001·28 cites·15 claims
- 0882US5977570ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 2, 1999·41 cites·13 claims
- 0981US6867437B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Mar 15, 2005·21 cites·3 claims
- 1081US5468654AMethod of manufacturing an insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 21, 1995·43 cites·7 claims
- 1176US6445012B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 3, 2002·16 cites·1 claims
- 1276US5559348ASemiconductor device having insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 24, 1996·41 cites·13 claims
- 1376US5079602AInsulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 7, 1992·33 cites·3 claims
- 1474US6107650AInsulated gate semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 22, 2000·38 cites·12 claims
- 1574US5173435AInsulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 22, 1992·37 cites·2 claims
- 1673US6177713B1Free wheel diode for preventing destruction of a field limiting innermost circumferential layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 23, 2001·35 cites·6 claims
- 1772US5047813ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 10, 1991·23 cites·11 claims
- 1871US6265735B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 24, 2001·22 cites·3 claims
- 1970US6693310B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 17, 2004·12 cites·4 claims
- 2070US5070377ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Dec 3, 1991·31 cites·11 claims
- 2165US6897493B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Granted May 24, 2005·9 cites·1 claims
- 2262US5547886AMethod of producing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 20, 1996·22 cites·14 claims
- 2355US5457329AVoltage-driven thyristorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 10, 1995·16 cites·17 claims
- 2444US5143859AMethod of manufacturing a static induction type switching deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 1, 1992·10 cites·5 claims
- 2532US5264381AMethod of manufacturing a static induction type switching deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 23, 1993·2 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →