Inventor · disambiguated record
Masatomo Hasegawa
Also filed as: HASEGAWA MASATOMO
18 granted patents·3 pending applications·556 citations·filing 1996–2010
95Inventor score
Files withFUJITSU LTD15FUJITSU MICROELECTRONICS LTD2SHARP KK2FUJISU MICROELECTRONICS LTD1HASEGAWA MASATOMO1
Top patents by PatentIndex Score
21 records- 0190US6628564B1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJITSU LTD·Filed 1999·Granted Sep 30, 2003·63 cites·24 claims
- 0290US6605963B2Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuitFUJITSU LTD·Filed 1999·Granted Aug 12, 2003·65 cites·42 claims
- 0390US6172537B1Semiconductor deviceFUJITSU LTD·Filed 1999·Granted Jan 9, 2001·86 cites·5 claims
- 0487US6618320B2Semiconductor memory deviceFUJITSU LTD·Filed 2002·Granted Sep 9, 2003·46 cites·5 claims
- 0587US6229363B1Semiconductor deviceFUJITSU LTD·Filed 1999·Granted May 8, 2001·69 cites·66 claims
- 0684US7567128B2Power amplifier suppressing radiation of second harmonic over wide frequency bandSHARP KK·Filed 2007·Granted Jul 28, 2009·14 cites·4 claims
- 0780US6198686B1Memory device having row decoderFUJITSU LTD·Filed 2000·Granted Mar 6, 2001·25 cites·12 claims
- 0879US7079443B2Semiconductor deviceFUJITSU LTD·Filed 2003·Granted Jul 18, 2006·18 cites·7 claims
- 0974US6201378B1Semiconductor integrated circuitFUJITSU LTD·Filed 1999·Granted Mar 13, 2001·36 cites·24 claims
- 1074US5671239ASemiconductor memory of xN type having error correcting circuit by parityFUJITSU LTD·Filed 1996·Granted Sep 23, 1997·69 cites·12 claims
- 1162US7706209B2Semiconductor memory device capable of driving non-selected word lines to a variable negative potential based on a bank access operationFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 27, 2010·0 cites·27 claims
- 1260US7733105B2Voltage clamp circuit and semiconductor device, overcurrent protection circuit, voltage measurement probe, voltage measurement device and semiconductor evaluation device respectively using the sameSHARP KK·Filed 2008·Granted Jun 8, 2010·3 cites·10 claims
- 1360US6072749AMemory device preventing a slow operation through a mask signalFUJITSU LTD·Filed 1998·Granted Jun 6, 2000·19 cites·10 claims
- 1459US2010220540A1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJISU MICROELECTRONICS LTD·Filed 2010·Application pending·0 cites
- 1551US6147919ASemiconductor memory employing direct-type sense amplifiers capable of realizing high-speed accessFUJITSU LTD·Filed 1999·Granted Nov 14, 2000·13 cites·19 claims
- 1651US6111795AMemory device having row decoderFUJITSU LTD·Filed 1999·Granted Aug 29, 2000·11 cites·9 claims
- 1748US2010321983A1Semiconductor memory device capable of driving non-selected word lines to first and second potentialsFUJITSU MICROELECTRONICS LTD·Filed 2010·Application pending·0 cites
- 1846US2011011439A1Photovoltaic power systemHASEGAWA MASATOMO·Filed 2009·Application pending·0 cites
- 1945US6115284AMemory device with faster write operationFUJITSU LTD·Filed 1999·Granted Sep 5, 2000·9 cites·7 claims
- 2043US6252269B1Semiconductor memory deviceFUJITSU LTD·Filed 1999·Granted Jun 26, 2001·8 cites·6 claims
- 2138US6246628B1Semiconductor memory device having read/write amplifiers disposed for respective memory segmentsFUJITSU LTD·Filed 2000·Granted Jun 12, 2001·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →