Inventor · disambiguated record
Makoto Hideshima
Also filed as: HIDESHIMA MAKOTO
9 granted patents·230 citations·filing 1979–1993
90Inventor score
Top patents by PatentIndex Score
9 records- 0187US5485341APower transistor overcurrent protection circuitTOSHIBA KK·Filed 1993·Granted Jan 16, 1996·50 cites·22 claims
- 0277US5143865AMetal bump type semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1991·Granted Sep 1, 1992·61 cites·9 claims
- 0371US5124772AInsulated gate bipolar transistor with a shortened carrier lifetime regionTOSHIBA KK·Filed 1990·Granted Jun 23, 1992·34 cites·8 claims
- 0469US4616144AHigh withstand voltage Darlington transistor circuitTOSHIBA KK·Filed 1984·Granted Oct 7, 1986·15 cites·11 claims
- 0565US5202578AModule-type semiconductor device of high power capacityTOSHIBA KK·Filed 1991·Granted Apr 13, 1993·38 cites·27 claims
- 0662US4267557ASemiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1979·Granted May 12, 1981·14 cites·8 claims
- 0746US4400716ASemiconductor device with glass layer contacting outer periphery of guard ring and adjacent substrateTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Aug 23, 1983·9 cites·8 claims
- 0832US5130784ASemiconductor device including a metallic conductor for preventing arcing upon failureTOSHIBA KK·Filed 1990·Granted Jul 14, 1992·8 cites·5 claims
- 0923US5128277AConductivity modulation type semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1990·Granted Jul 7, 1992·1 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →