Inventor · disambiguated record
Masahiko Hiratani
Also filed as: HIRATANI MASAHIKO
39 granted patents·5 pending applications·653 citations·filing 1985–2018
98Inventor score
Files withHITACHI LTD25RENESAS TECH CORP14AKIYAMA SATORU1HITACHI CHEMICAL CO LTD1RENESAS ELECTRONICS CORP1
Top patents by PatentIndex Score
44 records- 0196US4645726ASolid state lithium batteryHITACHI LTD·Filed 1985·Granted Feb 24, 1987·117 cites·6 claims
- 0291US6743739B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2002·Granted Jun 1, 2004·47 cites·11 claims
- 0390US6326218B1Semiconductor integrated circuit and its manufacturing methodHITACHI LTD·Filed 2000·Granted Dec 4, 2001·46 cites·6 claims
- 0487US8106441B2Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the sameAKIYAMA SATORU·Filed 2010·Granted Jan 31, 2012·7 cites·13 claims
- 0585US7408218B2Semiconductor device having plural dram memory cells and a logic circuitRENESAS TECH CORP·Filed 2001·Granted Aug 5, 2008·30 cites·21 claims
- 0685US6451665B1Method of manufacturing a semiconductor integrated circuitHITACHI LTD·Filed 1999·Granted Sep 17, 2002·66 cites·8 claims
- 0783US6503791B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Jan 7, 2003·21 cites·16 claims
- 0881US7683419B2Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Mar 23, 2010·7 cites·7 claims
- 0981US6833577B2Semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Dec 21, 2004·16 cites·18 claims
- 1081US6576928B2Semiconductor device capacitor with high permittivity tantalum pentoxide/niobium pentoxide dielectricHITACHI LTD·Filed 2001·Granted Jun 10, 2003·20 cites·24 claims
- 1181US6555429B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Apr 29, 2003·19 cites·6 claims
- 1278US7804118B2Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the sameRENESAS TECH CORP·Filed 2009·Granted Sep 28, 2010·5 cites·13 claims
- 1378US6787451B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·18 cites·18 claims
- 1477US7511327B2Capacitive electrode having semiconductor layers with an interface of separated grain boundariesRENESAS TECH CORP·Filed 2007·Granted Mar 31, 2009·3 cites·11 claims
- 1574US6992022B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2004·Granted Jan 31, 2006·14 cites·8 claims
- 1673US6867090B2Semiconductor device and method of manufacturing thereofHITACHI LTD·Filed 2003·Granted Mar 15, 2005·13 cites·10 claims
- 1773US6534375B2Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing stepsHITACHI LTD·Filed 2001·Granted Mar 18, 2003·14 cites·27 claims
- 1873US6483143B2Semiconductor device having a capacitor structure including a self-alignment deposition preventing filmHITACHI LTD·Filed 2001·Granted Nov 19, 2002·11 cites·2 claims
- 1970US6720603B2Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layerHITACHI LTD·Filed 2002·Granted Apr 13, 2004·11 cites·16 claims
- 2068US5077266AMethod of forming weak-link josephson junction, and superconducting device employing the junctionHITACHI LTD·Filed 1989·Granted Dec 31, 1991·25 cites·16 claims
- 2166US6521494B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2002·Granted Feb 18, 2003·7 cites·6 claims
- 2263US6544834B1Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5)HITACHI LTD·Filed 1999·Granted Apr 8, 2003·26 cites·32 claims
- 2362US6740901B2Production of semiconductor integrated circuitRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·8 cites·10 claims
- 2460US7259058B2Fabricating method of semiconductor integrated circuitsRENESAS TECHONOLOGY CORP·Filed 2001·Granted Aug 21, 2007·8 cites·29 claims
- 2560US5380704ASuperconducting field effect transistor with increased channel lengthHITACHI LTD·Filed 1993·Granted Jan 10, 1995·20 cites·24 claims
- 2659US7800153B2Capacitive electrode having semiconductor layers with an interface of separated grain boundariesRENESAS ELECTRONICS CORP·Filed 2008·Granted Sep 21, 2010·0 cites·12 claims
- 2759US6509246B2Production of semiconductor integrated circuitHITACHI LTD·Filed 2001·Granted Jan 21, 2003·7 cites·22 claims
- 2857US6955959B2Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide filmsRENESAS TECH CORP·Filed 2004·Granted Oct 18, 2005·3 cites·14 claims
- 2956US6664157B2Semiconductor integrated circuit device and the method of producing the sameHITACHI LTD·Filed 2001·Granted Dec 16, 2003·7 cites·32 claims
- 3056US5914068ABi-layer oxide ferroelectricsHITACHI LTD·Filed 1995·Granted Jun 22, 1999·15 cites·37 claims
- 3156US5250506ASuperconductive switching element with semiconductor channelHITACHI LTD·Filed 1991·Granted Oct 5, 1993·14 cites·13 claims
- 3253US7265407B2Capacitive electrode having semiconductor layers with an interface of separated grain boundariesRENESAS TECH CORP·Filed 2005·Granted Sep 4, 2007·0 cites·10 claims
- 3353US6144052ASemiconductor device and its manufactureHITACHI LTD·Filed 1996·Granted Nov 7, 2000·13 cites·42 claims
- 3451US6713343B2Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectricHITACHI LTD·Filed 2003·Granted Mar 30, 2004·3 cites·28 claims
- 3550US6583023B2Method for making semiconductor integrated circuitsHITACHI LTD·Filed 2002·Granted Jun 24, 2003·2 cites·23 claims
- 3650US2007001244A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3749US6989304B1Method for manufacturing a ruthenium film for a semiconductor deviceRENESAS TECH CORP·Filed 2000·Granted Jan 24, 2006·3 cites·20 claims
- 3843US7119407B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2004·Granted Oct 10, 2006·0 cites·4 claims
- 3943US6693792B2Semiconductor integrated circuits and fabricating method thereofHITACHI LTD·Filed 2003·Granted Feb 17, 2004·0 cites·7 claims
- 4042US2003173614A1Semiconductor integrated circuit device and manufacturing method thereofHITACHI LTD·Filed 2003·Application pending·0 cites
- 4142US2003141533A1Semiconductor integrated circuit device and manufacturing method thereofHITACHI LTD·Filed 2003·Application pending·0 cites
- 4239US5151409ASuperconducting composition comprising ln-th-cu-o, wherein ln is pr, nd, pm, sm, eu, gd, er or mixtures thereofHITACHI LTD·Filed 1990·Granted Sep 29, 1992·7 cites·3 claims
- 4334US2002047147A1Semiconductor device and process for producing the semiconductor deviceFiled 2001·Application pending·0 cites
- 4430US2019362968A1Method of producing semiconductor nanoparticleHITACHI CHEMICAL CO LTD·Filed 2018·Application pending·0 cites
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