Inventor · disambiguated record

Martin Christopher Holland

Also filed as: HOLLAND MARTIN C · HOLLAND MARTIN CHRISTOPHER

74 granted patents·7 pending applications·832 citations·filing 2013–2025

98Inventor score

Technology areasH10P H10D H10W B82Y H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD72 TAIWAN SEMICONDUCTOR MFG8 TAIWAN SEMICONDUCTOR MFG COMPNAY LTD1

Top patents by PatentIndex Score

81 records

0199US9520466B2Vertical gate-all-around field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·130 cites·20 claims
0299US9214555B2Barrier layer for FinFET channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 15, 2015·591 cites·18 claims
0397US9711647B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 18, 2017·13 cites·20 claims
0496US11784045B2Formation of single crystal semiconductors using planar vapor liquid solid epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
0594US10276719B1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·7 cites·20 claims
0693US11069813B2Localized heating in laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·6 cites·20 claims
0793US9876088B1III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·7 cites·20 claims
0893US9653288B1Method of forming ultra-thin nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·7 cites·19 claims
0992US9768252B2Vertical gate-all-around field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·6 cites·20 claims
1091US9368604B1Method of removing threading dislocation defect from a fin feature of III-V group semiconductor materialTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·9 cites·20 claims
1190US11626507B2Method of manufacturing FinFETs having barrier layers with specified SiGe doping concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 11, 2023·4 cites·20 claims
1290US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
1388US11587786B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·1 cites·20 claims
1488US9558942B1High density nanowire arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·5 cites·20 claims
1587US10937908B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 2, 2021·3 cites·20 claims
1687US9443729B1Method for forming FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·4 cites·20 claims
1786US12015083B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·1 cites·20 claims
1885US9312344B2Methods for forming semiconductor materials in STI trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·4 cites·19 claims
1984US11309417B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·2 cites·20 claims
2084US2025098515A1Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2182US12266526B2Formation of single crystal semiconductors using planar vapor liquid solid epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
2282US12051702B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
2382US10847622B2Method of forming source/drain structure with first and second epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
2482US10332965B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 25, 2019·2 cites·20 claims
2582US10121858B2Elongated semiconductor structure planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 6, 2018·3 cites·17 claims
2682US2024339537A1Thin-sheet finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2782US2025226217A1Formation of single crystal semiconductors using planar vapor liquid solid epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2881US2023387306A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG COMPNAY LTD·Filed 2023·Application pending·0 cites
2979US10991576B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
3079US9355920B2Methods of forming semiconductor devices and FinFET devices, and FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·3 cites·20 claims
3178US11830947B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
3278US11271163B2Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·19 claims
3377US10522623B1Germanium nitride layers on semiconductor structures, and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·20 claims
3477US2024204106A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3576US12501638B2Semiconductor device having reduced impurity diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
3676US12193318B2Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
3775US12027592B2Method of manufacturing a heterostructure or a stacked semiconductor structure having a silicon-germanium interfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
3875US2023361202A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3974US11949013B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
4074US11764289B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
4174US11721721B2Germanium nitride layers on semiconductor structures, and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·21 claims
4274US10680062B2III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 9, 2020·1 cites·20 claims
4373US11848385B2Localized protection layer for laser annealing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
4473US9978834B2Method of forming ultra-thin nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·1 cites·20 claims
4572US10263073B2III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 16, 2019·1 cites·19 claims
4671US2023377961A1Metal nitride diffusion barrier and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4770US11374095B2GE based semiconductor device and a method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
4870US10164024B2Heterostructures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·1 cites·20 claims
4968US11239368B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
5068US9576796B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·1 cites·19 claims

Showing the top 50 of 81 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →