Inventor · disambiguated record
Makio Iida
Also filed as: IIDA MAKIO
21 granted patents·1 pending application·602 citations·filing 1991–2017
96Inventor score
Top patents by PatentIndex Score
22 records- 0195US6242787B1Semiconductor device and manufacturing method thereofDENSO CORP·Filed 1996·Granted Jun 5, 2001·155 cites·27 claims
- 0280US7586272B2Cold cathode fluorescent lamp, cold cathode fluorescent lamp driving apparatus, cold cathode fluorescent lamp apparatus, liquid crystal display apparatus, control method for cold cathode fluorescent lamp, and control method for liquid crystal display apparatusSONY CORP·Filed 2006·Granted Sep 8, 2009·6 cites·15 claims
- 0378US5747846AProgrammable non-volatile memory cellNIPPON DENSO CO·Filed 1994·Granted May 5, 1998·36 cites·13 claims
- 0478US5503878AMethod of preparing thin film resistorsNIPPON DENSO CO·Filed 1994·Granted Apr 2, 1996·43 cites·11 claims
- 0576US8063863B2Picture display apparatus and methodYANO TOMOYA·Filed 2006·Granted Nov 22, 2011·4 cites·28 claims
- 0675US5225286ADielectric filmTOYODA CHUO KENKYUSHO KK·Filed 1992·Granted Jul 6, 1993·37 cites·8 claims
- 0775US5187559ASemiconductor device and process for producing sameNIPPON DENSO CO·Filed 1991·Granted Feb 16, 1993·39 cites·3 claims
- 0872US5525831ASemiconductor device with thin film resistor having reduced film thickness sensitivity during trimming processNIPPON DENSO CO·Filed 1994·Granted Jun 11, 1996·33 cites·18 claims
- 0966US6242792B1Semiconductor device having oblique portion as reflectionDENSO CORP·Filed 1999·Granted Jun 5, 2001·31 cites·36 claims
- 1062US6104078ADesign for a semiconductor device having elements isolated by insulating regionsDENSO CORP·Filed 1997·Granted Aug 15, 2000·29 cites·19 claims
- 1162US5625218ASemiconductor device equipped with a heat-fusible thin film resistor and production method thereofNIPPON DENSO CO·Filed 1995·Granted Apr 29, 1997·28 cites·21 claims
- 1260US5284794AMethod of making semiconductor device using a trimmable thin-film resistorNIPPON DENSO CO·Filed 1992·Granted Feb 8, 1994·21 cites·9 claims
- 1358US5644157AHigh withstand voltage type semiconductor device having an isolation regionNIPPON DENSO CO·Filed 1996·Granted Jul 1, 1997·25 cites·30 claims
- 1458US5449946ASemiconductor device provided with isolation regionNIPPON DENSO CO·Filed 1994·Granted Sep 12, 1995·28 cites·18 claims
- 1556US5592015ADielectric isolated type semiconductor device provided with bipolar elementNIPPON DENSO CO·Filed 1995·Granted Jan 7, 1997·23 cites·21 claims
- 1656US5557134ADielectric isolated type semiconductor deviceNIPPON DENSO CO·Filed 1994·Granted Sep 17, 1996·25 cites·16 claims
- 1754US5989970AMethod for fabricating semiconductor device having thin-film resistorNIPPON DENSO CO·Filed 1996·Granted Nov 23, 1999·16 cites·12 claims
- 1847US10650710B2Display body device and display apparatus with improved electrostatic withstanding voltageSONY CORP·Filed 2017·Granted May 12, 2020·0 cites·11 claims
- 1944US2008272998A1Image Display Device and Image Display MethodYANO TOMOYA·Filed 2005·Application pending·0 cites
- 2041US6287933B1Semiconductor device having thin film resistor and method of producing sameNIPPON DENSO CO·Filed 1992·Granted Sep 11, 2001·10 cites·2 claims
- 2140US5753943AInsulated gate type field effect transistor and method of manufacturing the sameNIPPON DENSO CO·Filed 1996·Granted May 19, 1998·7 cites·15 claims
- 2239US6146947AInsulated gate type field effect transistor and method of manufacturing the sameNIPPON DENSO CO·Filed 1998·Granted Nov 14, 2000·6 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →