Inventor · disambiguated record
Masayuki Iketani
Also filed as: IKETANI MASAYUKI
12 granted patents·442 citations·filing 1990–2003
94Inventor score
Top patents by PatentIndex Score
12 records- 0189US5188280AMethod of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metalsHITACHI LTD·Filed 1991·Granted Feb 23, 1993·114 cites·31 claims
- 0286US5090609AMethod of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metalsHITACHI LTD·Filed 1990·Granted Feb 25, 1992·98 cites·24 claims
- 0383US5703510APower on reset circuit for generating reset signal at power onMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 30, 1997·42 cites·4 claims
- 0483US5491655ASemiconductor memory device having non-selecting level generation circuitry for providing a low potential during reading mode and high level potential during another operation modeMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 13, 1996·38 cites·4 claims
- 0580US5659513AStatic semiconductor memory device having improved characteristicsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·31 cites·3 claims
- 0680US5544105AStatic semiconductor memory device having circuitry for lowering potential of bit lines at commencement of data writingMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 6, 1996·29 cites·7 claims
- 0775US5506805AStatic semiconductor memory device having circuitry for enlarging write recovery marginMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 9, 1996·25 cites·5 claims
- 0871US5629900ASemiconductor memory device operable to write data accurately at high speedMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 13, 1997·20 cites·7 claims
- 0967US6229365B1Semiconductor integrated circuit device operating stably at a plurality of power supply voltage levelsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 8, 2001·21 cites·11 claims
- 1065US5515326AStatic semiconductor memory device having circuitry for lowering potential of bit lines at commencement of data writingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 7, 1996·16 cites·3 claims
- 1144US6813202B2Semiconductor integrated circuit device capable of shortening period required for performing data retention testRENESAS TECH CORP·Filed 2003·Granted Nov 2, 2004·4 cites·5 claims
- 1235US5764573ASemiconductor device capable of externally and readily identifying set bonding optional function and method of identifying internal function of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 9, 1998·4 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →