Inventor · disambiguated record
Makoto Inai
Also filed as: INAI MAKOTO
11 granted patents·1 pending application·83 citations·filing 1997–2024
88Inventor score
Top patents by PatentIndex Score
12 records- 0187US12328178B2Control device, program, system, and control methodSOFTBANK CORP·Filed 2024·Granted Jun 10, 2025·1 cites·19 claims
- 0276US7012286B2Heterojunction field effect transistorMURATA MANUFACTURING CO·Filed 2002·Granted Mar 14, 2006·23 cites·10 claims
- 0368US6605831B1Field-effect semiconductor deviceMURATA MANUFACTURING CO·Filed 2000·Granted Aug 12, 2003·15 cites·11 claims
- 0458US6180528B1Method for forming a minute resist pattern and method for forming a gate electrodeMURATA MANUFACTURING CO·Filed 1999·Granted Jan 30, 2001·18 cites·13 claims
- 0557US6501182B2Semiconductor device and method for making the sameMURATA MANUFACTURING CO·Filed 2001·Granted Dec 31, 2002·9 cites·3 claims
- 0654US8717121B2Bulk acoustic wave resonatorMURATA MANUFACTURING CO·Filed 2013·Granted May 6, 2014·1 cites·20 claims
- 0754US7208777B1Field-effect semiconductor deviceMURATA MANUFACTURING CO·Filed 2000·Granted Apr 24, 2007·7 cites·12 claims
- 0844US8134221B2Inductor and filterMUKAIYAMA KAZUTAKA·Filed 2009·Granted Mar 13, 2012·0 cites·4 claims
- 0942US6008509AField effect transistorMURATA MANUFACTURING CO·Filed 1997·Granted Dec 28, 1999·9 cites·11 claims
- 1033US6835635B2Electrode forming method and field effect transistorMURATA MANUFACTURING CO·Filed 2002·Granted Dec 28, 2004·0 cites·17 claims
- 1133US2003080348A1Heterojunction field-effect transistorMURATA MANUFACTURING CO·Filed 2002·Application pending·0 cites
- 1232US6727126B2Masking member for forming fine electrode and manufacturing method therefor, method for forming electrode, and field effect transistorMURATA MANUFACTURING CO·Filed 2002·Granted Apr 27, 2004·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →