Inventor · disambiguated record
Masayuki Ishizaka
Also filed as: ISHIZAKA MASAYUKI
4 granted patents·2 pending applications·58 citations·filing 1999–2004
78Inventor score
Top patents by PatentIndex Score
6 records- 0178US6770528B2Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrateHITACHI ULSI SYS CO LTD·Filed 2003·Granted Aug 3, 2004·23 cites·9 claims
- 0269US6717202B2HSG semiconductor capacitor with migration inhibition layerRENESAS TECH CORP·Filed 2002·Granted Apr 6, 2004·15 cites·25 claims
- 0358US6524927B1Semiconductor device and method of fabricating the sameHITACHI LTD·Filed 1999·Granted Feb 25, 2003·17 cites·21 claims
- 0449US6444405B1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrateHITACHI LTD·Filed 2000·Granted Sep 3, 2002·3 cites·2 claims
- 0540US2004214428A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 0638US2002098678A1Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrateHITACHI LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →