Inventor · disambiguated record
Masaaki Kamiya
Also filed as: KAMIYA MASAAKI
42 granted patents·2 pending applications·1,731 citations·filing 1974–2017
98Inventor score
Files withSEIKO INSTR INC12SEIKO INSTR & ELECTRONICS10AGENCY IND SCIENCE TECHN9INTERCHIP CORP6AGENCY IND SCIENCE1
Top patents by PatentIndex Score
44 records- 0198US5233211ASemiconductor device for driving a light valveAGENCY IND SCIENCE TECHN·Filed 1991·Granted Aug 3, 1993·135 cites·15 claims
- 0298US4622656ANon-volatile semiconductor memorySEIKO INSTR & ELECTRONICS·Filed 1983·Granted Nov 11, 1986·137 cites·27 claims
- 0397US6067062ALight valve deviceSEIKO INSTR INC·Filed 1991·Granted May 23, 2000·199 cites·42 claims
- 0497US5637187ALight valve device makingSEIKO INSTR INC·Filed 1995·Granted Jun 10, 1997·204 cites·16 claims
- 0591US5759878AMethod of fabricating semiconductor device having epitaxially grown semiconductor single crystal filmAGENCY IND SCIENCE TECHN·Filed 1995·Granted Jun 2, 1998·65 cites·6 claims
- 0691US4821236ASemiconductor nonvolatile memoryKOGYO GIZYUTSUIN·Filed 1987·Granted Apr 11, 1989·86 cites·5 claims
- 0791US4395139ATemperature detecting deviceSEIKO INSTR & ELECTRONICS·Filed 1981·Granted Jul 26, 1983·60 cites·10 claims
- 0890US6191476B1Semiconductor deviceSEIKO INSTR INC·Filed 1997·Granted Feb 20, 2001·112 cites·24 claims
- 0990US5926699AMethod of fabricating semiconductor device having stacked layer substrateAGENCY IND SCIENCE TECHN·Filed 1998·Granted Jul 20, 1999·55 cites·19 claims
- 1090US5672518AMethod of fabricating semiconductor device having stacked layered substrateAGENCY IND SCIENCE TECHN·Filed 1993·Granted Sep 30, 1997·52 cites·10 claims
- 1189US4616340ANon-volatile semiconductor memoryAGENCY IND SCIENCE TECHN·Filed 1982·Granted Oct 7, 1986·50 cites·8 claims
- 1286US6747319B2Semiconductor device and method of fabricating the sameSEIKO INSTR INC·Filed 2001·Granted Jun 8, 2004·35 cites·4 claims
- 1386US5463238ACMOS structure with parasitic channel preventionSEIKO INSTR INC·Filed 1993·Granted Oct 31, 1995·61 cites·27 claims
- 1484US6040200AMethod of fabricating semiconductor device having stacked-layered substrateAGENCY IND SCIENCE TECHN·Filed 1997·Granted Mar 21, 2000·37 cites·19 claims
- 1577US6222235B1Small geometry high voltage semiconductor deviceSEIKO INSTR INC·Filed 1996·Granted Apr 24, 2001·37 cites·13 claims
- 1677US5585304AMethod of making semiconductor device with multiple transparent layersAGENCY IND SCIENCE·Filed 1994·Granted Dec 17, 1996·66 cites·21 claims
- 1775US5486716ASemiconductor integrated circuit device with electrostatic damage protectionSEIKO INSTR INC·Filed 1992·Granted Jan 23, 1996·32 cites·10 claims
- 1875US4071822ADigital voltage detecting circuit for a power sourceSEIKO INSTR & ELECTRONICS·Filed 1976·Granted Jan 31, 1978·22 cites·6 claims
- 1974USRE36836ESemiconductor device for driving a light valveAGENCY IND SCIENCE TECHN·Filed 1995·Granted Aug 29, 2000·22 cites·15 claims
- 2070US11165388B2Thermostatic oven type electronic instrumentINTERCHIP CO LTD·Filed 2017·Granted Nov 2, 2021·2 cites·8 claims
- 2169US4739264AMagnetic sensor using a plurality of Hall effect devicesSEIKO INSTR & ELECTRONICS·Filed 1986·Granted Apr 19, 1988·28 cites·16 claims
- 2268US4361797AConstant current circuitSEIKO INSTR & ELECTRONICS·Filed 1981·Granted Nov 30, 1982·19 cites·8 claims
- 2366US4943943ARead-out circuit for semiconductor nonvolatile memoryHAYASHI YUTAKA·Filed 1984·Granted Jul 24, 1990·16 cites·8 claims
- 2464US8009483B2Nonvolatile memory cell and data latch incorporating nonvolatile memory cellINTERCHIP CORP·Filed 2009·Granted Aug 30, 2011·5 cites·10 claims
- 2563US4163193ABattery voltage detecting apparatus for an electronic timepieceSEIKO INSTR & ELECTRONICS·Filed 1976·Granted Jul 31, 1979·13 cites·4 claims
- 2662US6320474B1MOS-type capacitor and integrated circuit VCO using sameINTERCHIP CORP·Filed 1999·Granted Nov 20, 2001·21 cites·9 claims
- 2762US4875011AMagnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrateSEIKO INSTR INC·Filed 1987·Granted Oct 17, 1989·24 cites·12 claims
- 2862US4794433ANon-volatile semiconductor memory with non-uniform gate insulatorSEIKO INSTR & ELECTRONICS·Filed 1986·Granted Dec 27, 1988·20 cites·4 claims
- 2961US4639755AThermosensitive semiconductor device using Darlington circuitSEIKO INSTR & ELECTRONICS·Filed 1982·Granted Jan 27, 1987·16 cites·6 claims
- 3057US5825064ASemiconductor volatile/nonvolatile memoryAGENCY IND SCIENCE TECHN·Filed 1993·Granted Oct 20, 1998·18 cites·17 claims
- 3156US7515001B2AC amplifier and piezoelectric vibrator oscillatorINTERCHIP CORP·Filed 2006·Granted Apr 7, 2009·2 cites·17 claims
- 3252US6107163AMethod of manufacturing a semiconductor chipSEIKO INSTR INC·Filed 1998·Granted Aug 22, 2000·16 cites·20 claims
- 3352US5136540ANon-volatile semiconductor memory for volatiley and non-volatiley storing information and writing method thereofAGENCY IND SCIENCE TECHN·Filed 1990·Granted Aug 4, 1992·15 cites·21 claims
- 3448US3974636ABooster circuit for a liquid crystal display device of a timepieceSEIKO INSTR & ELECTRONICS·Filed 1974·Granted Aug 17, 1976·6 cites·3 claims
- 3547US6028338ASemiconductor integrated circuit device with electrostatic damage protectionSEIKO INSTR INC·Filed 1995·Granted Feb 22, 2000·9 cites·2 claims
- 3647US5672906ASemiconductor device having defects of deep level generated by electron beam irradiation in a semiconductor substrateSEIKO INSTR INC·Filed 1996·Granted Sep 30, 1997·11 cites·5 claims
- 3744US7391279B2Inverting amplifier and crystal oscillator having sameINTERCHIP CORP·Filed 2006·Granted Jun 24, 2008·0 cites·15 claims
- 3844US5982461ALight valve deviceFiled 1991·Granted Nov 9, 1999·11 cites·49 claims
- 3939US2013278331A1Reference Potential Converter CircuitINTERCHIP CORP·Filed 2013·Application pending·0 cites
- 4036US9847433B2Integrated MOS varicap, and voltage controlled oscillator and filter having sameINTERCHIP CORP·Filed 2015·Granted Dec 19, 2017·0 cites·18 claims
- 4135US2012274305A1Voltage Regulator and Voltage-Regulator-Equipped Oscillation CircuitKAMIYA MASAAKI·Filed 2012·Application pending·0 cites
- 4233US5851909AMethod of producing semiconductor device using an adsorption layerSEIKO INSTR INC·Filed 1993·Granted Dec 22, 1998·6 cites·28 claims
- 4333US5122847ANon-volatile semiconductor memory with CVD tunnel oxideSEIKO INSTR & ELECTRONICS·Filed 1988·Granted Jun 16, 1992·4 cites·13 claims
- 4430US5100698AMethod and apparatus for applying releasing agent to glass plateCENTRAL GLASS CO LTD·Filed 1990·Granted Mar 31, 1992·2 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Masaaki Kamiya files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →