Inventor · disambiguated record
Masakazu Kanechika
Also filed as: KANECHIKA MASAKAZU
10 granted patents·4 pending applications·35 citations·filing 2003–2019
85Inventor score
Top patents by PatentIndex Score
14 records- 0186US10002863B2Semiconductor device and manufacturing method for the sameTOYOTA MOTOR CO LTD·Filed 2016·Granted Jun 19, 2018·5 cites·9 claims
- 0280US9666580B1Nitride semiconductor device and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2016·Granted May 30, 2017·3 cites·13 claims
- 0375US9773900B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2016·Granted Sep 26, 2017·2 cites·3 claims
- 0474US9401421B2Switching deviceTOYOTA MOTOR CO LTD·Filed 2015·Granted Jul 26, 2016·2 cites·6 claims
- 0571US8222675B2Nitride semiconductor device including gate insulating portion containing AINSUGIMOTO MASAHIRO·Filed 2009·Granted Jul 17, 2012·5 cites·12 claims
- 0670US6936484B2Method of manufacturing semiconductor device and semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2003·Granted Aug 30, 2005·14 cites·21 claims
- 0766US8110870B2Semiconductor deviceSUGIMOTO MASAHIRO·Filed 2009·Granted Feb 7, 2012·3 cites·13 claims
- 0862US9536873B2Semiconductor device and method of manufacturing the sameTOYOTA CHUO KENKYUSHO KK·Filed 2015·Granted Jan 3, 2017·1 cites·11 claims
- 0945US10763355B2Power semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2019·Granted Sep 1, 2020·0 cites·3 claims
- 1044US2016197174A1Semiconductor device and manufacturing method of the sameTOYOTA MOTOR CO LTD·Filed 2014·Application pending·0 cites
- 1140US10283626B2Semiconductor device and manufacturing method of the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted May 7, 2019·0 cites·4 claims
- 1239US2008090395A1Method for producing p-type group III nitride semiconductor and method for producing electrode for p-type group III nitride semiconductorSUGIMOTO MASAHIRO·Filed 2007·Application pending·0 cites
- 1334US2016204254A1Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Application pending·0 cites
- 1433US2016013286A1Schottky barrier diode formed with nitride semiconductor substrateTOYOTA MOTOR CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →