Inventor · disambiguated record
Maxim Kelman
Also filed as: KELMAN MAXIM · KELMAN MAXIM B
24 granted patents·17 pending applications·296 citations·filing 2004–2016
95Inventor score
Top patents by PatentIndex Score
41 records- 0197US7521340B2Methods for creating a densified group IV semiconductor nanoparticle thin filmINNOVALIGHT INC·Filed 2007·Granted Apr 21, 2009·73 cites·21 claims
- 0292US9059341B1Method for manufacturing an interdigitated back contact solar cellDU PONT·Filed 2014·Granted Jun 16, 2015·13 cites·15 claims
- 0392US7572740B2Methods for optimizing thin film formation with reactive gasesINNOVALIGHT INC·Filed 2008·Granted Aug 11, 2009·27 cites·23 claims
- 0491US7851336B2Method of forming a passivated densified nanoparticle thin film on a substrateINNOVALIGHT INC·Filed 2008·Granted Dec 14, 2010·18 cites·43 claims
- 0590US7718707B2Method for preparing nanoparticle thin filmsINNOVALIGHT INC·Filed 2007·Granted May 18, 2010·21 cites·19 claims
- 0689US8471170B2Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactorLI XUEGENG·Filed 2008·Granted Jun 25, 2013·31 cites·23 claims
- 0789US7199451B2Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer filmINTEL CORP·Filed 2004·Granted Apr 3, 2007·39 cites·8 claims
- 0888US7923368B2Junction formation on wafer substrates using group IV nanoparticlesINNOVALIGHT INC·Filed 2008·Granted Apr 12, 2011·15 cites·3 claims
- 0987US8889233B1Method for reducing stress in porous dielectric filmsKELMAN MAXIM·Filed 2006·Granted Nov 18, 2014·16 cites·26 claims
- 1085US7776724B2Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric materialINNOVALIGHT INC·Filed 2007·Granted Aug 17, 2010·9 cites·9 claims
- 1184US7910462B2Growing [110] silicon on [001] oriented substrate with rare-earth oxide buffer filmINTEL CORP·Filed 2006·Granted Mar 22, 2011·8 cites·11 claims
- 1280US9306087B2Method for manufacturing a photovoltaic cell with a locally diffused rear sideSCARDERA GIUSEPPE·Filed 2012·Granted Apr 5, 2016·3 cites·20 claims
- 1379US8148176B2Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrateKELMAN MAXIM·Filed 2009·Granted Apr 3, 2012·7 cites·10 claims
- 1468US8247312B2Methods for printing an ink on a textured wafer surfaceABBOTT MALCOLM·Filed 2008·Granted Aug 21, 2012·3 cites·12 claims
- 1568US8138070B2Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profilesKELMAN MAXIM·Filed 2009·Granted Mar 20, 2012·3 cites·18 claims
- 1664US7148122B2Bonding of substratesINTEL CORP·Filed 2004·Granted Dec 12, 2006·9 cites·9 claims
- 1761US8858843B2High fidelity doping paste and methods thereofROGOJINA ELENA·Filed 2010·Granted Oct 14, 2014·1 cites·20 claims
- 1859US2012009721A1Group iv nanoparticle junctions and devices therefromABBOTT MALCOLM·Filed 2011·Application pending·0 cites
- 1956US9966479B2Aluminum-tin paste and its use in manufacturing solderable electrical conductorsDU PONT·Filed 2015·Granted May 8, 2018·0 cites·10 claims
- 2054US2009263977A1Selective functionalization of doped group iv surfaces using lewis acid/lewis base interactionROGOJINA ELENA V·Filed 2008·Application pending·0 cites
- 2154US2010275982A1Group iv nanoparticle junctions and devices therefromABBOTT MALCOLM·Filed 2008·Application pending·0 cites
- 2253US2013092525A1Concentric flow-through plasma reactor and methods thereforINNOVALIGHT INC·Filed 2012·Application pending·0 cites
- 2353US2014370640A1High fidelity doping paste and methods thereofINNOVALIGHT INC·Filed 2014·Application pending·0 cites
- 2452US2010178718A1Methods for improving performance variation of a solar cell manufacturing processKELMAN MAXIM·Filed 2009·Application pending·0 cites
- 2551US2011092078A1Selective functionalization of doped group iv nanoparticle surfaces using lewis acid/lewis base interactionINNOVALIGHT INC·Filed 2010·Application pending·0 cites
- 2650US2008063855A1Semiconductor thin films formed from group iv nanoparticlesKELMAN MAXIM·Filed 2007·Application pending·0 cites
- 2749US2009014423A1Concentric flow-through plasma reactor and methods thereforLI XUEGENG·Filed 2007·Application pending·0 cites
- 2846US2011091731A1Semiconductor thin films formed from group iv nanoparticlesINNOVALIGHT INC·Filed 2010·Application pending·0 cites
- 2945US2009053878A1Method for fabrication of semiconductor thin films using flash lamp processingKELMAN MAXIM·Filed 2007·Application pending·0 cites
- 3044US2008138966A1Method of fabricating a densified nanoparticle thin film with a set of occluded poresROGOJINA ELENA V·Filed 2007·Application pending·0 cites
- 3143US9793104B2Preparing a semiconductor surface for epitaxial depositionAIXTRON SE·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 3243US2008078441A1Semiconductor devices and methods from group iv nanoparticle materialsPOPLAVSKYY DMITRY·Filed 2007·Application pending·0 cites
- 3342US8273669B2Method of forming a passivated densified nanoparticle thin film on a substratePOPLAVSKYY DMITRY·Filed 2010·Granted Sep 25, 2012·0 cites·7 claims
- 3440US9156740B2Ceramic boron-containing doping paste and methods thereforKELMAN MAXIM·Filed 2011·Granted Oct 13, 2015·0 cites·18 claims
- 3540US2006202209A1Limiting net curvature in a waferKELMAN MAXIM B·Filed 2005·Application pending·0 cites
- 3639US2008171425A1Methods of forming an epitaxial layer on a group iv semiconductor substratePOPLAVSKYY DMITRY·Filed 2007·Application pending·0 cites
- 3737US8513104B2Methods of forming a floating junction on a solar cell with a particle masking layerABBOTT MALCOLM·Filed 2011·Granted Aug 20, 2013·0 cites·11 claims
- 3837US2013119319A1Ceramic boron-containing doping paste and methods thereofKELMAN MAXIM·Filed 2012·Application pending·0 cites
- 3936US10096473B2Formation of a layer on a semiconductor substrateAIXTRON SE·Filed 2016·Granted Oct 9, 2018·0 cites·1 claims
- 4036US8420517B2Methods of forming a multi-doped junction with silicon-containing particlesSCARDERA GIUSEPPE·Filed 2010·Granted Apr 16, 2013·0 cites·20 claims
- 4136US2011003466A1Methods of forming a multi-doped junction with porous siliconINNOVALIGHT INC·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →