Inventor · disambiguated record
Masashi Kitazawa
Also filed as: KITAZAWA MASASHI
21 granted patents·5 pending applications·404 citations·filing 1995–2018
95Inventor score
Files withMITSUBISHI ELECTRIC CORP10OLYMPUS CORP6OLYMPUS OPTICAL CO3RENESAS TECH CORP3NATIONAL UNIV CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY2
Top patents by PatentIndex Score
26 records- 0196US6518623B1Semiconductor device having a buried-channel MOS structureMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·136 cites·3 claims
- 0293US6461934B2Method of manufacturing semiconductor device having trench type element isolation regionsMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 8, 2002·89 cites·6 claims
- 0383US7543482B2Carbon thin line probeOLYMPUS CORP·Filed 2007·Granted Jun 9, 2009·5 cites·1 claims
- 0476US10203354B2Cantilever for a scanning type probe microscopeNATIONAL UNIV CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY·Filed 2017·Granted Feb 12, 2019·1 cites·8 claims
- 0576US6521963B1Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Feb 18, 2003·37 cites·9 claims
- 0674US6333222B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 25, 2001·31 cites·12 claims
- 0773US7791163B2Semiconductor device and its manufacturing methodRENESAS TECH CORP·Filed 2005·Granted Sep 7, 2010·5 cites·15 claims
- 0868US6667221B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 23, 2003·11 cites·10 claims
- 0963US7010966B2SPM cantilever and fabricating method thereofOLYMPUS CORP·Filed 2003·Granted Mar 14, 2006·10 cites·2 claims
- 1063US6248653B1Method of manufacturing gate structureMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 19, 2001·11 cites·20 claims
- 1162US7735357B2SPM cantilever and manufacturing method thereofOLYMPUS CORP·Filed 2005·Granted Jun 15, 2010·8 cites·9 claims
- 1262US6918286B2SPM cantileverOLYMPUS OPTICAL CO·Filed 2002·Granted Jul 19, 2005·12 cites·27 claims
- 1356US6694805B2Cantilever for scanning probe microscopyOLYMPUS OPTICAL CO·Filed 2002·Granted Feb 24, 2004·8 cites·23 claims
- 1455US10545172B2Cantilever and manufacturing method for cantileverNATIONAL UNIV CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY·Filed 2018·Granted Jan 28, 2020·0 cites·20 claims
- 1552US5742468AElectric charge generator for use in an apparatus for producing an electrostatic latent imageOLYMPUS OPTICAL CO·Filed 1995·Granted Apr 21, 1998·15 cites·8 claims
- 1651US6521517B1Method of fabricating a gate electrode using a second conductive layer as a mask in the formation of an insulating layer by oxidation of a first conductive layerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 18, 2003·3 cites·10 claims
- 1748US6664602B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 16, 2003·3 cites·2 claims
- 1847US6335556B1Semiconductor device and method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 1, 2002·13 cites·4 claims
- 1946US2008121029A1Cantilever with carbon nano-tube for AFMOLYMPUS CORP·Filed 2008·Application pending·0 cites
- 2045US8043918B2Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2010·Granted Oct 25, 2011·0 cites·19 claims
- 2143US2006103406A1CantileverOLYMPUS CORP·Filed 2005·Application pending·0 cites
- 2242US2005160802A1SPM cantilever and fabricating method thereofOLYMPUS CORP·Filed 2005·Application pending·0 cites
- 2338US2004108524A1Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2437US8754471B2Semiconductor device having gate in recessIWAMATSU TOSHIAKI·Filed 2011·Granted Jun 17, 2014·0 cites·6 claims
- 2536US2004159857A1Semiconductor device having vertical transistorRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2634US6525380B2CMOS with a fixed charge in the gate dielectricMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Feb 25, 2003·6 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →