Inventor · disambiguated record
Martin Knaipp
Also filed as: KNAIPP MARTIN
21 granted patents·36 citations·filing 2005–2018
91Inventor score
Top patents by PatentIndex Score
21 records- 0182US7663203B2High-voltage PMOS transistorAUSTRIAMICROSYSTEMS AG·Filed 2005·Granted Feb 16, 2010·11 cites·6 claims
- 0276US8212318B2High-voltage transistor with improved high stride performanceKNAIPP MARTIN·Filed 2007·Granted Jul 3, 2012·6 cites·11 claims
- 0369US7888234B2Method for manufacturing a semiconductor body with a trench and semiconductor body with a trenchAUSTRIAMICROSYSTEMS AG·Filed 2008·Granted Feb 15, 2011·5 cites·15 claims
- 0468US8963243B2P-channel LDMOS transistor and method of producing a p-channel LDMOS transistorPARK JONG MUN·Filed 2011·Granted Feb 24, 2015·3 cites·7 claims
- 0568US8129782B2High-voltage transistor and method for its manufactureKNAIPP MARTIN·Filed 2005·Granted Mar 6, 2012·3 cites·8 claims
- 0661US7820342B2Multiple mask and method for producing differently doped regionsAUSTRIAMICROSYSTEMS AG·Filed 2005·Granted Oct 26, 2010·1 cites·9 claims
- 0759US8399937B2Semiconductor body and method for the design of a semiconductor body with a connecting lineROEHRER GEORG·Filed 2007·Granted Mar 19, 2013·2 cites·20 claims
- 0857US9076880B2Asymmetric high-voltage JFET and manufacturing processKNAIPP MARTIN·Filed 2012·Granted Jul 7, 2015·1 cites·9 claims
- 0956US9748408B2High-voltage semiconductor device and method of producing the sameAMS AG·Filed 2014·Granted Aug 29, 2017·0 cites·12 claims
- 1056US7781809B2High voltage depletion layer field effect transistorAUSTRIAMICROSYSTEMS AG·Filed 2005·Granted Aug 24, 2010·1 cites·19 claims
- 1155US7977197B2Method for fabricating a transistor with reliable source dopingAUSTRIAMICROSYSTEMS AG·Filed 2006·Granted Jul 12, 2011·1 cites·6 claims
- 1255US7898030B2High-voltage NMOS-transistor and associated production methodAUSTRIAMICROSYSTEMS AG·Filed 2005·Granted Mar 1, 2011·1 cites·6 claims
- 1354US9954118B2Method of producing a high-voltage semiconductor drift deviceAMS AG·Filed 2017·Granted Apr 24, 2018·0 cites·9 claims
- 1454US8227318B2Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formationLEVY MAX·Filed 2009·Granted Jul 24, 2012·1 cites·10 claims
- 1550US9362395B2High-voltage field-effect transistor and method of making the sameAMS AG·Filed 2013·Granted Jun 7, 2016·0 cites·8 claims
- 1648US9722047B2Method of producing a high-voltage transistorAMS AG·Filed 2016·Granted Aug 1, 2017·0 cites·8 claims
- 1745US10283635B2Field effect transistor device with separate source and body contacts and method of producing the deviceAMS AG·Filed 2017·Granted May 7, 2019·0 cites·16 claims
- 1844US11257919B2Schottky barrier diode with improved Schottky contact for high voltagesAMS AG·Filed 2018·Granted Feb 22, 2022·0 cites·16 claims
- 1943US9076676B2High-voltage transistor device and production methodAMS AG·Filed 2012·Granted Jul 7, 2015·0 cites·10 claims
- 2039US9685437B2High-voltage transistor device and production methodKNAIPP MARTIN·Filed 2012·Granted Jun 20, 2017·0 cites·9 claims
- 2139US9093527B2High-voltage transistor and component containing the latterKNAIPP MARTIN·Filed 2006·Granted Jul 28, 2015·0 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Martin Knaipp files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →