Inventor · disambiguated record
Masayoshi Kosaki
Also filed as: KOSAKI MASAYOSHI
15 granted patents·2 pending applications·30 citations·filing 2005–2019
88Inventor score
Top patents by PatentIndex Score
17 records- 0181US7981744B2Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growthTOYODA GOSEI KK·Filed 2005·Granted Jul 19, 2011·7 cites·3 claims
- 0279US7432538B2Field-effect transistorTOYODA GOSEI KK·Filed 2006·Granted Oct 7, 2008·8 cites·5 claims
- 0376US10636663B2Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted regionTOYODA GOSEI KK·Filed 2018·Granted Apr 28, 2020·2 cites·8 claims
- 0475US9905432B2Semiconductor device, method for manufacturing the same and power converterTOYODA GOSEI KK·Filed 2016·Granted Feb 27, 2018·2 cites·13 claims
- 0566US10332754B2Method of manufacturing nitride semiconductor deviceTOYODA GOSEI KK·Filed 2016·Granted Jun 25, 2019·1 cites·24 claims
- 0666US7750351B2Epitaxial substrate for field effect transistorSUMITOMO CHEMICAL CO·Filed 2006·Granted Jul 6, 2010·9 cites·8 claims
- 0757US7554132B2Electronic device containing group-III element based nitride semiconductorsTOYODA GOSEI KK·Filed 2006·Granted Jun 30, 2009·1 cites·12 claims
- 0849US9852925B2Method of manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2017·Granted Dec 26, 2017·0 cites·10 claims
- 0948US10510833B2Method for manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2018·Granted Dec 17, 2019·0 cites·7 claims
- 1048US10083918B2Manufacturing method of semiconductor deviceTOYODA GOSEI KK·Filed 2017·Granted Sep 25, 2018·0 cites·11 claims
- 1146US10879376B2Method for manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2019·Granted Dec 29, 2020·0 cites·6 claims
- 1245US9269778B2Semiconductor apparatus including N-type semiconductor layerTOYODA GOSEI KK·Filed 2014·Granted Feb 23, 2016·0 cites·16 claims
- 1345US2009173969A1Semiconductor DeviceKIKAWA JUNJIRO·Filed 2007·Application pending·0 cites
- 1444US10026851B2MPS diodeTOYODA GOSEI KK·Filed 2017·Granted Jul 17, 2018·0 cites·18 claims
- 1541US2009001384A1Group III Nitride semiconductor HFET and method for producing the sameTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 1637US8420516B2Method for producing n-type group III nitride semiconductorKOSAKI MASAYOSHI·Filed 2011·Granted Apr 16, 2013·0 cites·17 claims
- 1736US9704952B2Semiconductor device and method for manufacturing semiconductor deviceTOYODA GOSEI KK·Filed 2016·Granted Jul 11, 2017·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →