Inventor · disambiguated record
Masato Koyama
Also filed as: KOYAMA MASATO
95 granted patents·15 pending applications·1,412 citations·filing 1985–2024
99Inventor score
Top patents by PatentIndex Score
110 records- 0196USD736815SPortion of display panel or screen with an iconSONY CORP·Filed 2014·Granted Aug 18, 2015·65 cites·1 claims
- 0295US6104530ATransparent laminates and optical filters for displays using sameMITSUI CHEMICALS INC·Filed 1997·Granted Aug 15, 2000·215 cites·25 claims
- 0394US7804145B2Semiconductor device, capacitor, and field effect transistorTOSHIBA KK·Filed 2009·Granted Sep 28, 2010·28 cites·12 claims
- 0492USD962132SRear bumper for automobileNISSAN MOTOR·Filed 2020·Granted Aug 30, 2022·17 cites·1 claims
- 0592US7807990B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 5, 2010·22 cites·20 claims
- 0692US7563678B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 21, 2009·21 cites·20 claims
- 0790US7485936B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Feb 3, 2009·16 cites·15 claims
- 0890US6613658B2MIS field effect transistor and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Sep 2, 2003·44 cites·11 claims
- 0990US5428285APosition controller for controlling an electric motorMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jun 27, 1995·103 cites·10 claims
- 1088US7964489B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jun 21, 2011·13 cites·16 claims
- 1187US7667273B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Feb 23, 2010·12 cites·10 claims
- 1287US7429777B2Semiconductor device with a gate electrode having a laminate structureTOSHIBA KK·Filed 2006·Granted Sep 30, 2008·10 cites·18 claims
- 1385US7825458B2Nonvolatile semiconductor memory and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Nov 2, 2010·12 cites·11 claims
- 1485US7391085B2Semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jun 24, 2008·7 cites·10 claims
- 1585US5194398ASemiconductor film and process for its productionMITSUI TOATSU CHEMICALS·Filed 1992·Granted Mar 16, 1993·102 cites·30 claims
- 1684US5159539AHigh frequency DC/AC power converting apparatusMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 27, 1992·67 cites·9 claims
- 1784US4780658AControl system for induction motorMITSUBISHI ELECTRIC CORP·Filed 1985·Granted Oct 25, 1988·43 cites·2 claims
- 1883US6194864B1Control device for induction motorMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 27, 2001·34 cites·4 claims
- 1982US6864663B2Hybrid vehicle power control apparatus and hybrid construction equipment using the power control apparatusKOBELCO CONSTR MACHINERY LTD·Filed 2002·Granted Mar 8, 2005·56 cites·21 claims
- 2082US5911899ACorrosion-proof transparent heater panels and preparation process thereofMITSUI CHEMICALS INC·Filed 1996·Granted Jun 15, 1999·66 cites·28 claims
- 2181US7541657B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2008·Granted Jun 2, 2009·6 cites·15 claims
- 2281US7498643B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Mar 3, 2009·6 cites·5 claims
- 2380US7075158B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jul 11, 2006·7 cites·13 claims
- 2479USD940017SFront bumper for automobileNISSAN MOTOR·Filed 2020·Granted Jan 4, 2022·7 cites·1 claims
- 2579US7608849B2Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elementsTOSHIBA KK·Filed 2006·Granted Oct 27, 2009·16 cites·24 claims
- 2678US7432570B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Oct 7, 2008·5 cites·11 claims
- 2778US5355297AThree-level three-phase inverter apparatusMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Oct 11, 1994·52 cites·52 claims
- 2877US7863695B2Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMISTOSHIBA KK·Filed 2008·Granted Jan 4, 2011·5 cites·8 claims
- 2977US5248348AAmorphous silicon solar cell and method for manufacturing the sameMITSUI TOATSU CHEMICALS·Filed 1991·Granted Sep 28, 1993·51 cites·27 claims
- 3076US8174080B2Semiconductor deviceICHIHARA REIKA·Filed 2011·Granted May 8, 2012·2 cites·18 claims
- 3175US7429776B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 30, 2008·4 cites·21 claims
- 3273US7968956B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jun 28, 2011·5 cites·8 claims
- 3373US6088246AMethod of and device for controlling pulse width modulation inverterMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 11, 2000·50 cites·6 claims
- 3473US5189603ADc to ac electric power converting apparatusMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 23, 1993·44 cites·9 claims
- 3572US9112132B2Resistance-variable memory deviceISHIKAWA TAKAYUKI·Filed 2012·Granted Aug 18, 2015·3 cites·18 claims
- 3672US7986014B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jul 26, 2011·2 cites·18 claims
- 3772US7416967B2Semiconductor device, and method for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Aug 26, 2008·3 cites·10 claims
- 3871US8053300B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Nov 8, 2011·2 cites·11 claims
- 3971US7576397B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Aug 18, 2009·2 cites·15 claims
- 4071US7410855B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Aug 12, 2008·2 cites·19 claims
- 4170US6849908B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Feb 1, 2005·16 cites·18 claims
- 4270US6602753B2Semiconductor device having a gate insulating film comprising a metal oxide and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Aug 5, 2003·15 cites·22 claims
- 4369US7943984B2Nonvolatile semiconductor memory apparatusTOSHIBA KK·Filed 2008·Granted May 17, 2011·4 cites·20 claims
- 4469US7122470B2Semiconductor device with a CMOS transistorTOSHIBA KK·Filed 2006·Granted Oct 17, 2006·3 cites·16 claims
- 4568US7960793B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Jun 14, 2011·3 cites·11 claims
- 4668US7745888B2Method of making p-channel and n-channel MIS transistors using single film formation of TaCTOSHIBA KK·Filed 2008·Granted Jun 29, 2010·2 cites·11 claims
- 4768US7728394B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Jun 1, 2010·2 cites·11 claims
- 4868US5247237AControl device of induction motorMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 21, 1993·28 cites·13 claims
- 4967US7632728B2Method of forming TaC gate electrodes with crystal orientation ratio defining the work functionTOSHIBA KK·Filed 2008·Granted Dec 15, 2009·2 cites·11 claims
- 5067US7601623B2Method of manufacturing a semiconductor device with a gate electrode having a laminate structureTOSHIBA KK·Filed 2008·Granted Oct 13, 2009·2 cites·9 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Masato Koyama files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →