Inventor · disambiguated record
Masao Kuriyama
Also filed as: KURIYAMA MASAO
58 granted patents·6 pending applications·1,274 citations·filing 1976–2025
99Inventor score
Files withTOSHIBA KK39YANGTZE MEMORY TECH CO LTD15SAMSUNG ELECTRONICS CO LTD6SHIKIBO LTD2KURIYAMA MASAO1
Top patents by PatentIndex Score
64 records- 0195US6377502B1Semiconductor device that enables simultaneous read and write/erase operationTOSHIBA KK·Filed 2000·Granted Apr 23, 2002·80 cites·37 claims
- 0295US6320428B1Semiconductor integrated circuit deviceTOSHIBA KK·Filed 2000·Granted Nov 20, 2001·72 cites·10 claims
- 0395US6052313ASemiconductor integrated circuit deviceTOSHIBA KK·Filed 1998·Granted Apr 18, 2000·92 cites·27 claims
- 0494US7120053B2Semiconductor intergrated circuit device with a main cell array and a fuse cell array whose word lines and bit lines are extended in the same directionsTOSHIBA KK·Filed 2005·Granted Oct 10, 2006·24 cites·8 claims
- 0594US6842377B2Nonvolatile semiconductor memory device with first and second read modesTOSHIBA KK·Filed 2003·Granted Jan 11, 2005·86 cites·13 claims
- 0694US6373325B1Semiconductor device with a charge pumping circuitTOSHIBA KK·Filed 2000·Granted Apr 16, 2002·90 cites·14 claims
- 0793US6532181B2Semiconductor memory device having redundant circuitry for replacing defective memory cellTOSHIBA KK·Filed 2001·Granted Mar 11, 2003·70 cites·21 claims
- 0892US7126855B2Semiconductor device that enables simultaneous read and write/read operationTOSHIBA KK·Filed 2005·Granted Oct 24, 2006·21 cites·14 claims
- 0991US11935619B2Page buffer circuits of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
- 1090US6711066B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2002·Granted Mar 23, 2004·39 cites·11 claims
- 1190US6320800B1Semiconductor memory and nonvolatile semiconductor memory having redundant circuitry for replacing defective memory cellTOSHIBA KK·Filed 2000·Granted Nov 20, 2001·50 cites·19 claims
- 1289US6236609B1Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2000·Granted May 22, 2001·38 cites·26 claims
- 1389US6222773B1Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasingTOSHIBA KK·Filed 2000·Granted Apr 24, 2001·48 cites·6 claims
- 1488US6829194B2Semiconductor device that enables simultaneous read and write/read operationTOSHIBA KK·Filed 2002·Granted Dec 7, 2004·30 cites·4 claims
- 1586US6512693B2Semiconductor device that enables simultaneous read and write/erase operationTOSHIBA KK·Filed 2001·Granted Jan 28, 2003·28 cites·18 claims
- 1686US6442080B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2001·Granted Aug 27, 2002·29 cites·20 claims
- 1783US7738299B2Erase discharge control method of nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 15, 2010·9 cites·11 claims
- 1883US5805510AData erase mechanism for nonvolatile memory of boot block typeTOSHIBA KK·Filed 1997·Granted Sep 8, 1998·54 cites·11 claims
- 1983US5559737ANonvolatile semiconductor memory capable of simultaneously equalizing bit lines and sense linesTOSHIBA KK·Filed 1994·Granted Sep 24, 1996·51 cites·11 claims
- 2081US5568419ANon-volatile semiconductor memory device and data erasing method thereforTOSHIBA KK·Filed 1995·Granted Oct 22, 1996·49 cites·24 claims
- 2179US8990667B2Error check and correction circuit, method, and memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 24, 2015·6 cites·17 claims
- 2278US7345919B2Semiconductor device that enables simultaneous read and write/read operationTOSHIBA KK·Filed 2006·Granted Mar 18, 2008·7 cites·16 claims
- 2378US6700817B2Semiconductor integrated circuit device with operation/function setting information memoryTOSHIBA KK·Filed 2002·Granted Mar 2, 2004·16 cites·27 claims
- 2476US2025285692A1Digital verify failbit count (vfc) circuitYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2575US12277993B2Page buffer circuits in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 2675US6281665B1High speed internal voltage generator with reduced current drawTOSHIBA KK·Filed 2000·Granted Aug 28, 2001·26 cites·23 claims
- 2774US6262916B1Non-volatile semiconductor memory device capable of pre-conditioning memory cells prior to a data erasureTOSHIBA KK·Filed 2000·Granted Jul 17, 2001·19 cites·19 claims
- 2874US5259013AHard x-ray magnification apparatus and method with submicrometer spatial resolution of images in more than one dimensionUS ARMY·Filed 1991·Granted Nov 2, 1993·56 cites·12 claims
- 2971US8493795B2Voltage stabilization device and semiconductor device including the same, and voltage generation methodKURIYAMA MASAO·Filed 2010·Granted Jul 23, 2013·4 cites·12 claims
- 3071US6920057B2Semiconductor device that enables simultaneous read and write/read operationTOSHIBA KK·Filed 2004·Granted Jul 19, 2005·11 cites·6 claims
- 3170US6160738ANonvolatile semiconductor memory systemTOSHIBA KK·Filed 1994·Granted Dec 12, 2000·27 cites·48 claims
- 3270US2024428855A1Memory device, the operation method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3369US6856543B2Semiconductor integrated circuit device with erasable and programmable fuse memoryTOSHIBA KK·Filed 2003·Granted Feb 15, 2005·10 cites·12 claims
- 3467US12334162B2Digital Verify Failbit Count (VFC) circuitYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3565US12112802B2Memory device, the operation method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 3665US6480426B2Semiconductor integrated circuit deviceTOSHIBA KK·Filed 2001·Granted Nov 12, 2002·8 cites·25 claims
- 3762US5559744ASemiconductor integrated circuit device having a test mode setting circuitTOSHIBA KK·Filed 1995·Granted Sep 24, 1996·21 cites·34 claims
- 3860US7605643B2Voltage generation circuit and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 20, 2009·4 cites·13 claims
- 3959US12424299B2Digital verify failbit count (VFC) circuitYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 4058US4113431AMethod for dyeing cellulose fibers by disperse dyesSHIKIBO LTD·Filed 1976·Granted Sep 12, 1978·5 cites·10 claims
- 4156US11984193B2Page buffer circuits in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 4256US7714637B2Negative potential discharge circuit and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 11, 2010·3 cites·17 claims
- 4356US7414892B2Nonvolatile semiconductor memory device which stores multivalue dataTOSHIBA KK·Filed 2007·Granted Aug 19, 2008·2 cites·6 claims
- 4456US7397716B2Nonvolatile semiconductor memory device which stores multivalue dataTOSHIBA KK·Filed 2006·Granted Jul 8, 2008·2 cites·6 claims
- 4555US12322456B2Digital verify failbit count (VFC) circuitYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 4655US2025364050A1Memory devices and operation methods thereof, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 4754US6856548B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2004·Granted Feb 15, 2005·5 cites·11 claims
- 4854US6480427B2Negative-potential detecting circuit having an enhanced sensitivity of detecting negative potentialsTOSHIBA KK·Filed 2001·Granted Nov 12, 2002·8 cites·19 claims
- 4954US6064618ASemiconductor memory device having improved cell array layoutTOSHIBA KK·Filed 1998·Granted May 16, 2000·12 cites·10 claims
- 5054US5296801ABias voltage generating circuitTOSHIBA KK·Filed 1992·Granted Mar 22, 1994·16 cites·10 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →