Inventor · disambiguated record
Masaaki Kuzuhara
Also filed as: KUZUHARA MASAAKI
25 granted patents·6 pending applications·973 citations·filing 1991–2011
97Inventor score
Top patents by PatentIndex Score
31 records- 0196US6492669B2Semiconductor device with schottky electrode having high schottky barrierNEC CORP·Filed 2001·Granted Dec 10, 2002·134 cites·20 claims
- 0295US7859014B2Semiconductor deviceNEC CORP·Filed 2005·Granted Dec 28, 2010·46 cites·18 claims
- 0395US6465814B2Semiconductor deviceNEC CORP·Filed 2001·Granted Oct 15, 2002·104 cites·24 claims
- 0494US6100571AFet having non-overlapping field control electrode between gate and drainNEC CORP·Filed 1999·Granted Aug 8, 2000·151 cites·20 claims
- 0591US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 0691US6483135B1Field effect transistorNEC COMPOUND SEMICONDUCTOR·Filed 1999·Granted Nov 19, 2002·93 cites·21 claims
- 0790US6765241B2Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitancesNEC CORP·Filed 2001·Granted Jul 20, 2004·54 cites·10 claims
- 0889US6441391B1Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrateNEC CORP·Filed 2001·Granted Aug 27, 2002·52 cites·3 claims
- 0987US5504353AField effect transistorNEC CORP·Filed 1995·Granted Apr 2, 1996·73 cites·16 claims
- 1083US7973335B2Field-effect transistor having group III nitride electrode structureNEC CORP·Filed 2003·Granted Jul 5, 2011·33 cites·12 claims
- 1181US6534790B2Compound semiconductor field effect transistorNEC CORP·Filed 2001·Granted Mar 18, 2003·28 cites·28 claims
- 1279US7256432B2Field-effect transistorNEC CORP·Filed 2003·Granted Aug 14, 2007·25 cites·20 claims
- 1373US6440822B1Method of manufacturing semiconductor device with sidewall metal layersNEC CORP·Filed 2001·Granted Aug 27, 2002·19 cites·15 claims
- 1472US8653561B2III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic deviceHASHIMOTO SHIN·Filed 2011·Granted Feb 18, 2014·3 cites·48 claims
- 1567US7071526B2Semiconductor device having Schottky junction electrodeNEC CORP·Filed 2003·Granted Jul 4, 2006·13 cites·50 claims
- 1663US7459788B2Ohmic electrode structure of nitride semiconductor deviceNEC CORP·Filed 2005·Granted Dec 2, 2008·2 cites·6 claims
- 1763US5596211AField effect transistor having a graded bandgap InGaAsP channel formed of a two-dimensional electron gasNEC CORP·Filed 1995·Granted Jan 21, 1997·22 cites·4 claims
- 1859US7615868B2Electrode, method for producing same and semiconductor device using sameNEC CORP·Filed 2008·Granted Nov 10, 2009·1 cites·20 claims
- 1957US5373168ATwo-dimensional electron gas field effect transistor including an improved InGaAs channel layerNEC CORP·Filed 1992·Granted Dec 13, 1994·18 cites·20 claims
- 2051US5453631AField effect transistor having a multi-layer channelNEC CORP·Filed 1993·Granted Sep 26, 1995·13 cites·12 claims
- 2148US7323783B2Electrode, method for producing same and semiconductor device using sameNEC CORP·Filed 2004·Granted Jan 29, 2008·2 cites·15 claims
- 2247US6255673B1Hetero-junction field effect transistorNEC CORP·Filed 1999·Granted Jul 3, 2001·10 cites·34 claims
- 2338US2007164326A1Field effect transistorOKAMOTO YASUHIRO·Filed 2005·Application pending·0 cites
- 2438US2008006853A1Schottky Electrode of Nitride Semiconductor Device and Process for Production ThereofNEC CORP·Filed 2005·Application pending·0 cites
- 2537US2011186861A1Semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2011·Application pending·0 cites
- 2636US5466955AField effect transistor having an improved transistor characteristicNEC CORP·Filed 1995·Granted Nov 14, 1995·4 cites·25 claims
- 2736US2003006437A1Field effect transistorNEC CORP·Filed 2002·Application pending·0 cites
- 2833US5138405AQuasi one-dimensional electron gas field effect transistorNEC CORP·Filed 1991·Granted Aug 11, 1992·3 cites·9 claims
- 2932US5272372AHigh speed non-volatile programmable read only memory device fabricated by using selective doping technologyNEC CORP·Filed 1991·Granted Dec 21, 1993·5 cites·9 claims
- 3032US2006054929A1Semiconductor deviceNAKAYAMA TATSUO·Filed 2004·Application pending·0 cites
- 3131US2002171096A1Schottky gate field effect transistor with high output characteristicNEC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →